Dual N P Channel Enhancement Mode HXY MOSFET AON3611 HXY with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
AON3611-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
16A;14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,14A
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
10.8W
Input Capacitance(Ciss):
416pF@20V;930pF@20V
Mfr. Part #:
AON3611-HXY
Package:
DFN-8L(3x3)
Product Description
Product Overview
The AON3611-HXY is a Dual N+P-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Model: AON3611-HXY
- Package: DFN3X3B-8L
- Website: www.hxymos.com
Technical Specifications
| Parameter | N-Channel | P-Channel | Units |
| Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID@TC=25, VGS=10V) | 16 | -14 | A |
| Continuous Drain Current (ID@TC=100, VGS=10V) | 5 | -4 | A |
| Continuous Drain Current (ID@TA=25, VGS=10V) | 2.3 | -1.8 | A |
| Pulsed Drain Current (IDM) | 40 | -40 | A |
| Single Pulse Avalanche Energy (EAS) | 26.6 | 110 | mJ |
| Avalanche Current (IAS) | 8.7 | -20 | A |
| Total Power Dissipation (PD@TC=25) | 10.8 | 10.8 | W |
| Total Power Dissipation (PD@TA=100) | 2 | 2 | W |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-Ambient (RJA) | 62 | /W | |
| Thermal Resistance Junction-Case (RJC) | 6 | /W | |
| Drain-Source Breakdown Voltage (BVDSS) @ VGS=0V, ID=250uA | 30 | -30 | V |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS=10V, ID=10A | <20 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS=-10V, ID=-8A | <30 | m | |
| Gate Threshold Voltage (VGS(th)) @ VGS=VDS, ID=250uA | 1.0 to 2.5 | -1.0 to -2.5 | V |
| Drain-Source Leakage Current (IDSS) @ VDS=24V, VGS=0V, TJ=25 | <1 | <1 | uA |
| Gate-Source Leakage Current (IGSS) @ VGS=20V, VDS=0V | 100 | nA | |
| Forward Transconductance (gfs) @ VDS=5V, ID=10A | 14 | S | |
| Gate Resistance (Rg) @ VDS=0V, VGS=0V, f=1MHz | 2.3 | 15 | |
| Total Gate Charge (Qg) @ VDS=20V, ID=10A | 5 (4.5V) | nC | |
| Total Gate Charge (Qg) @ VDS=-20V, ID=-6A | 9.8 (-4.5V) | nC | |
| Input Capacitance (Ciss) @ VDS=15V, VGS=0V, f=1MHz | 416 | 930 | pF |
| Output Capacitance (Coss) @ VDS=15V, VGS=0V, f=1MHz | 62 | 148 | pF |
| Reverse Transfer Capacitance (Crss) @ VDS=15V, VGS=0V, f=1MHz | 51 | 115 | pF |
2509181602_HXY-MOSFET-AON3611-HXY_C5148676.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
