Industrial power Infineon FF600R12KE7 module with 1200 volt VCES and isolated base plate construction
Key Attributes
Model Number:
FF600R12KE7
Product Custom Attributes
Td(off):
490ns
Td(on):
435ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.462nF
Input Capacitance(Cies):
92.3nF
IGBT Type:
IGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.15V@12mA
Operating Temperature:
-40℃~+175℃
Gate Charge(Qg):
9.66uC@600V,15V
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
53.2mJ
Turn-On Energy (Eon):
17mJ
Mfr. Part #:
FF600R12KE7
Package:
Screw Terminals
Product Description
Product Overview
The FF600R12KE7 is a 62 mm C-Series module featuring TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode. It offers high power density and is designed for demanding industrial applications. Key electrical features include a VCES of 1200 V and a nominal collector current (IC nom) of 600 A. The module boasts excellent mechanical characteristics, including 4 kV AC 1 min insulation, high creepage and clearance distances, and an isolated base plate.
Product Attributes
- Brand: Infineon
- Technology: TRENCHSTOPIGBT7
- Series: C-Series
- Package Size: 62 mm
- Insulation: 4 kV AC 1 min
- Comparative Tracking Index (CTI): > 400
- Product Validation: Qualified for industrial applications according to IEC 60747, 60749, and 60068.
Technical Specifications
| Parameter | Symbol | Note or test condition | Values | Unit |
|---|---|---|---|---|
| Electrical Features | VCES | 1200 | V | |
| IC nom | 600 | A | ||
| ICRM | 1200 | A | ||
| VCE,sat | with positive temperature coefficient | |||
| TRENCHSTOPTM | IGBT7 | |||
| Mechanical Features | Insulation | AC 1 min | 4.0 | kV |
| Creepage distance | terminal to heatsink | 29.0 | mm | |
| Creepage distance | terminal to terminal | 23.0 | mm | |
| Clearance | terminal to heatsink | 23.0 | mm | |
| Clearance | terminal to terminal | 11.0 | mm | |
| Comparative tracking index | > 400 | |||
| IGBT, T1 / T2 - Maximum Rated Values | ICDC | Tvj max = 175 C, TC = 90 C | 600 | A |
| ItRMS | TTerminal = 115 C, TC = 90 C | 650 | A | |
| ItRMS | TTerminal = 115 C, TC = 115 C | 600 | A | |
| ICRM | tp limited by Tvj op | 1200 | A | |
| VGES | 20 | V | ||
| VCE sat | IC = 600 A, VGE = 15 V, Tvj = 25 C | 1.50 - 1.75 | V | |
| VGEth | IC = 12 mA, VCE = VGE, Tvj = 25 C | 5.15 - 6.45 | V | |
| ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 C | 0.1 | mA | |
| IGES | VCE = 0 V, VGE = 20 V, Tvj = 25 C | 100 | nA | |
| RthJC | per IGBT | 0.0668 | K/W | |
| RthCH | per IGBT, grease = 1 W/(mK) | 0.0336 | K/W | |
| Diode, D1 / D2 - Maximum Rated Values | VRRM | Tvj = 25 C | 1200 | V |
| IF | 600 | A | ||
| IFRM | tP = 1 ms | 1200 | A | |
| I2t | tP = 10 ms, VR = 0 V, Tvj = 125 C | 29900 | As | |
| I2t | tP = 10 ms, VR = 0 V, Tvj = 175 C | 23200 | As | |
| VF | IF = 600 A, VGE = 0 V, Tvj = 25 C | 1.80 - 2.10 | V | |
| RthJC | per diode | 0.110 | K/W | |
| RthCH | per diode, grease = 1 W/(mK) | 0.0466 | K/W | |
| Tvj op | -40 - 175 | C | ||
| General Module Features | Weight | 340 | g | |
| Storage temperature | Tstg | -40 - 125 | C | |
| Mounting torque | M5, Screw | 3 - 6 | Nm | |
| Terminal connection torque | M6, Screw | 2.5 - 5 | Nm |
2504101957_Infineon-FF600R12KE7_C44038342.pdf
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