P Channel MOSFET HXY MOSFET SI2319 ideal for high frequency circuits and power switching performance
Key Attributes
Model Number:
SI2319
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
70pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
600pF@20V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
SI2319
Package:
SOT-23
Product Description
Product Overview
The SI2319 is a P-Channel Enhancement Mode MOSFET designed for excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and DC-DC converters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: SI2319
- Package Marking: 2319 A
- Origin: Shenzhen, China
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -5 | A | |||
| RDS(ON) | RDS(ON) | VGS=-10V | 73 | 85 | mΩ | |
| RDS(ON) | RDS(ON) | VGS=-4.5V | 98 | 120 | mΩ | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (TA=25) | -40 | V | ||
| Gate-Source Voltage | VGS | (TA=25) | ±20 | V | ||
| Drain Current-Continuous | ID | (TA=25) | -5 | A | ||
| Drain Current-Continuous | ID (100) | -2.3 | A | |||
| Pulsed Drain Current | IDM | -18 | A | |||
| Maximum Power Dissipation | PD | (TA=25) | 1.4 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 89 | /Ω | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.0 | -1.9 | -3.0 | V |
| Forward Transconductance | gFS | VDS=-5V,ID=-3A | 5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | 600 | PF | |||
| Output Capacitance | Coss | 90 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V, F=1.0MHz | 70 | PF | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-20V, VGS=-10V,RGEN=3,RL=2 | 9 | nS | ||
| Turn-on Rise Time | tr | VDD=-20V, VGS=-10V,RGEN=3,RL=2 | 8 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=-20V, VGS=-10V,RGEN=3,RL=2 | 28 | nS | ||
| Turn-Off Fall Time | tf | VDD=-20V, VGS=-10V,RGEN=3,RL=2 | 10 | nS | ||
| Total Gate Charge | Qg | VDS=-20V,ID=-3A, VGS=-10V | 14 | nC | ||
| Gate-Source Charge | Qgs | VDS=-20V,ID=-3A, VGS=-10V | 2.9 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-20V,ID=-3A, VGS=-10V | 3.8 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-3.3A (Note 3) | 1.2 | V | ||
| Diode Forward Current | IS | (Note 2) | -3.3 | A | ||
2509181605_HXY-MOSFET-SI2319_C5337197.pdf
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