SOT 23 Package N Channel MOSFET IRLML6344TRPBF HXY Featuring Low Gate Threshold Voltage and Switching
Key Attributes
Model Number:
IRLML6344TRPBF-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Input Capacitance(Ciss):
825pF@15V
Pd - Power Dissipation:
1.4W
Mfr. Part #:
IRLML6344TRPBF-HXY
Package:
SOT-23
Product Description
Product Overview
The IRLML6344TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Material: N-Channel Enhancement Mode MOSFET
- Package: SOT-23
- Marking: A09T
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=4A | - | 41 | 55 | m |
| VGS=4.5V, ID=5A | - | 32 | 42 | m | ||
| VGS=10V, ID=5.8A | - | 28 | 30 | |||
| Forward Transconductance | gFS | VDS=5V,ID=5A | 10 | - | - | S |
| Input Capacitance | Clss | VDS=15V,VGS=0V, F=1.0MHz | - | 825 | - | PF |
| Output Capacitance | Coss | - | 100 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 78 | - | PF | |
| Turn-on Delay Time | td(on) | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 3.3 | - | nS |
| Turn-on Rise Time | tr | - | 4.8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 26 | - | nS | |
| Turn-Off Fall Time | tf | - | 4 | - | nS | |
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | - | 10 | - | nC |
| Gate-Source Charge | Qgs | - | 1.6 | - | nC | |
| Gate-Drain Charge | Qg | - | 3.1 | - | nC | |
| Diode Forward Voltage | VSD | VGS=0V,IS=5.8A | - | - | 1.2 | V |
| Diode Forward Current | IS | - | - | 5.8 | A | |
| Drain-Source Voltage | VDS | - | - | 30 | V | |
| Gate-Source Voltage | VGS | - | - | 12 | V | |
| Drain Current-Continuous | ID | - | - | 5.8 | A | |
| Drain Current-Pulsed | IDM | - | - | 30 | A | |
| Maximum Power Dissipation | PD | - | - | 1.4 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | - | 89 | - | /W |
2509181740_HXY-MOSFET-IRLML6344TRPBF-HXY_C6285738.pdf
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