Power MOSFET HXY MOSFET AOD2610E HXY N Channel Enhancement Mode with 60V Drain Source Voltage Rating
Key Attributes
Model Number:
AOD2610E-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.3mΩ@10V,45A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
180pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.3nF@25V
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
AOD2610E-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD2610E-HXY is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG HXY
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Package: TO252-2L
- Product ID: AOD2610E-HXY
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | - | - | 60 | V |
| VGS | Gate-Source Voltage | - | - | ±20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | - | - | 80 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | - | - | 43 | A |
| IDM | Pulsed Drain Current | - | - | 272 | A |
| IAS | Avalanche Current | - | - | 28 | A |
| PD@TC=25 | Total Power Dissipation | - | - | 104 | W |
| TSTG | Storage Temperature Range | -55 | - | 150 | |
| TJ | Operating Junction Temperature Range | -55 | - | 150 | |
| RJA | Thermal Resistance Junction-Ambient | - | 62.5 | - | /W |
| BVDSS | Drain-Source Breakdown Voltage | 60 | - | - | V |
| RDS(ON) | Static Drain-Source On- Resistance (VGS=10V, ID=45A) | - | 6 | 8 | Ω |
| RDS(ON) | Static Drain-Source On- Resistance (VGS=4.5V, ID=30A) | - | 8.3 | 15 | Ω |
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=250uA) | 1 | 1.4 | 3 | V |
| gfs | Forward Transconductance (VDS=10V, ID=30A) | - | 71 | - | S |
| IDSS | Drain-Source Leakage Current (VDS=60V, VGS=0V) | - | - | 10 | μA |
| IDSS | Drain-Source Leakage Current (Tj=125, VDS=48V ,VGS=0V) | - | - | 250 | μA |
| IGSS | Gate-Source Leakage (VGS=±20V, VDS=0V) | - | - | ±100 | nA |
| Qg | Total Gate Charge (ID=30A, VDS=48V, VGS=10V) | - | 33 | 45 | nC |
| Qgs | Gate-Source Charge | - | 5 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | - | 21 | - | nC |
| td(on) | Turn-on Delay Time (VDS=30V, ID=30A, RG=3.3Ω, VGS=10V) | - | 10 | - | ns |
| tr | Rise Time | - | 43 | - | ns |
| td(off) | Turn-off Delay Time | - | 47 | - | ns |
| tf | Fall Time | - | 80 | - | ns |
| Ciss | Input Capacitance (VGS=0V, VDS=25V, f=1.0MHz) | - | 2680 | 3300 | pF |
| Coss | Output Capacitance | - | 260 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 180 | - | pF |
| VSD | Forward On Voltage (IS=45A, VGS=0V) | - | - | 1.3 | V |
| trr | Reverse Recovery Time (IS=10A, VGS=0V, dI/dt=100A/s) | - | 30 | - | ns |
| Qrr | Reverse Recovery Charge | - | 18 | - | nC |
2509181601_HXY-MOSFET-AOD2610E-HXY_C4748753.pdf
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