N Channel HXY MOSFET IRLR7843TRPBF HXY with TO 252 2L Package and Excellent Switching Performance
Key Attributes
Model Number:
IRLR7843TRPBF-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
85pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.485nF@15V
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
20.6nC@10V
Mfr. Part #:
IRLR7843TRPBF-HXY
Package:
TO-252-2L
Product Description
Product Overview
The IRLR7843TRPBF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Product ID: IRLR7843TRPBF
- Pack Marking: 120N03 XXXX YYYY
- Package: TO-252-2L (TO-252-2(DPAK))
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| General Features | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| ID | Continuous Drain Current, VGS @ 10V | TC=25 | 120 | A | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | 3 | 3.8 | m | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 75 | A | |||
| IDM | Pulsed Drain Current | 384 | A | |||
| EAS | Single Pulse Avalanche Energy | 196 | mJ | |||
| IAS | Avalanche Current | 53.8 | A | |||
| PD@TC=25 | Total Power Dissipation | 62.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=250mA | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=24V, VGS=0V | - | - | 1 | mA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250mA | 1.4 | 1.7 | 2.5 | V |
| IGSS | Gate Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, IDS=20A | - | 3 | 3.8 | m |
| RDS(ON) | Drain-Source On-state Resistance | VGS=4.5V, IDS=15A | - | 4.0 | 5.5 | m |
| Gfs | Forward Transconductance | VDS=5V, IDS=10A | - | 24.6 | - | S |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=20A, VGS=0V | - | 0.8 | 1.1 | V |
| trr | Reverse Recovery Time | IDS=20A, dlSD/dt=100A/ms | - | 35.6 | - | ns |
| ta | Charge Time | - | 19.3 | - | ||
| tb | Discharge Time | - | 16.3 | - | ||
| Qrr | Reverse Recovery Charge | - | 26 | - | nC | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 1 | 2 | |
| Ciss | Input Capacitance | VGS=0V, VDS=15V, Frequency=1.0MHz | - | 2485 | 2971 | pF |
| Coss | Output Capacitance | - | 850 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF | |
| td(ON) | Turn-on Delay Time | VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W | - | 12.4 | 23 | ns |
| tr | Turn-on Rise Time | - | 9.5 | 18 | ns | |
| td(OFF) | Turn-off Delay Time | - | 27.2 | 49 | ns | |
| tf | Turn-off Fall Time | - | 35.2 | 64 | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=15V, VGS=10V, IDS=20A | - | 20.6 | 28.8 | nC |
| Qg | Total Gate Charge | VDS=15V, VGS=4.5V, IDS=20A | - | 9.8 | - | nC |
| Qgth | Threshold Gate Charge | - | 1.8 | - | ||
| Qgs | Gate-Source Charge | - | 3.8 | - | ||
| Qgd | Gate-Drain Charge | - | 3.7 | - | ||
2509181740_HXY-MOSFET-IRLR7843TRPBF-HXY_C6285777.pdf
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