Integrated power hybrid IC Infineon IRAM136-3023B 30A 150V motor driver with internal shunt resistor

Key Attributes
Model Number: IRAM136-3023B
Product Custom Attributes
Voltage - Isolation:
2000Vrms
Mfr. Part #:
IRAM136-3023B
Package:
SIP-18
Product Description

Product Description

The IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC featuring an internal shunt resistor, designed for low voltage motor drive applications. Its compact, high-performance AC motor-driver design simplifies integration in electric vehicles, portable power tools, and light industrial equipment. This advanced HIC combines International Rectifier's low RDS(on) Advance Planar MOSFET Super Rugged technology with a high-voltage, high-speed 3-phase driver in a fully isolated, thermally enhanced package. Integrated features include temperature monitoring, over-current and over-temperature protection, and an under-voltage lockout function, ensuring high protection levels and fail-safe operation. The single in-line package (SiP3) with a heat spreader minimizes PCB space and addresses isolation challenges.

Product Attributes

  • Brand: International Rectifier
  • Certifications: UL Recognized (File Number E252584), RoHS Compliant

Technical Specifications

ParameterDescriptionValueUnitsConditions
VBR(DSS)MOSFET Blocking Voltage150V
V+Positive Bus Input Voltage100V
IO @ TC=25CRMS Phase Current30ANote 1
IO @ TC=100CRMS Phase Current15ANote 1
IO PulsedPulsed RMS Phase Current56ANote 1 and 2
FPWMPWM Carrier Frequency20kHz
PDPower Dissipation per MOSFET89W@ TC =25C
VISOIsolation Voltage2000VRMS(1min)
TJ (MOSFET & IC)Maximum Operating Junction Temperature+150C
TCOperating Case Temperature Range-20 to +100C
TST*Storage Temperature Range-40 to +125C
T Mounting TorqueMounting Torque (M4 screw)0.7 to 1.17Nm
IBDFBootstrap Diode Peak Forward Current4.5AtP= 10ms, TJ = 150C, TC=100C
PBRPeak Bootstrap Resistor Peak Power (Single Pulse)25.0WtP=100s, TC =100C
VS1,2,3High side floating supply offset voltage-25 to VB1,2,3 +0.3V
VB1,2,3High side floating supply voltage-0.3 to 150V
VCCLow Side and logic fixed supply voltage-0.3 to 20V
VI1Input voltage-0.3 to min(VSS+15V, VCC+0.3V)V/I1, HI1, ITrip
V(BR)DSSDrain-to-Source Breakdown Voltage150VTJ=25C
RBRBootstrap Resistor Value22TJ=25C
IBUS_TRIPCurrent Protection Threshold (positive going)56 to 68ASee Figure 2
VBDFMBootstrap Diode Forward Voltage Drop1.2 to 1.9VIF=1A, TJ=25C; IF=1A, TJ=125C
VSDBody Diode Forward Voltage Drop1.10 to 1.25VID=15A, TJ=25C; ID=15A, TJ=125C
RDS(ON)Drain-to-Source On Resistance1.2 to 1.9mID=15A, VCC=15V, TJ=25C; ID=15A, VCC=15V, TJ=125C
EO1Turn-On Switching Loss395 to 1100JID=15A, V+=100V, VCC=15V, /=2mH, TJ=25C
EOFFTurn-Off Switching Loss135 to 250JID=15A, V+=100V, VCC=15V, /=2mH, TJ=25C
ETOTTotal Switching Loss530 to 1350JID=15A, V+=100V, VCC=15V, /=2mH, TJ=25C
EREcDiode Reverse Recovery energy210 to 1000JID=15A, V+=100V, VCC=15V, /=2mH, TJ=25C
tRRDiode Reverse Recovery time240 to 270nsID=15A, V+=100V, VCC=15V, /=2mH, TJ=25C
Q*Turn-On FET Gate Charge60 to 89nCID=36A, V+=75V, VS=10V
EASSingle Pulse Avalanche Energy470mJID=36A, V+=75V, VS=10V
IARAvalanche Current36ANote 3, 4
EARRepetitive Avalanche Energy32mJRepetitive rating; pulse width limited by max. junction temperature. (Note 4)
VB1,2,3High side floating supply voltageVS+10 to VS+20V
VS1,2,3High side floating supply offset voltage150VNote 6
VCCLow side and logic fixed supply voltage12 to 20V
VI1Logic input voltageVSS to VSS+5V/I1, HI1
VIHLogic "0" input voltage3.0V
VILLogic "1" input voltage0.8V
VCCUV+, VBSUV+VCC and VBS supply undervoltage positive going threshold8.0 to 9.8V
VCCUV-, VBSUV-VCC and VBS supply undervoltage negative going threshold7.4 to 9.0V
VCCUVH, VBSUVHVCC and VBS supply undervoltage lock-out hysteresis0.3 to 0.7V
VI1,ClampInput Clamp Voltage (HI1, /I1, T/ITRIP)4.9 to 5.5VII1=10A
IQBSQuiescent VBS supply current165AVI1=0V
IQCCQuiescent VCC supply current3.35mAVI1=0V
I/OOffset Supply Leakage Current60A
II1+Input bias current200 to 300AVI1=5V
II1-Input bias current100 to 220AVI1=0V
ITRIP+ITRIP bias current30 to 100AVITRIP=5V
ITRIP-ITRIP bias current0 to 1AVITRIP=0V
V(ITRIP)ITRIP threshold Voltage440 to 540mV
V(ITRIP,HYS)ITRIP Input Hysteresis70mV
TO1Input to Output propagation turn-on delay time0.83sSee fig.11
TOFFInput to Output propagation turn-off delay time1.08sSee fig. 11
TF/I1Input Filter time (HI1, /I1)100 to 200nsVI1=0 & VI1=5V
TB/T-TripITRIP Blanking Time100 to 150nsVI1=0 & VI1=5V
DTDead Time220 to 360nsVBS=VDD=15V
MTMatching Propagation Delay Time (On & Off)40 to 75nsVCC= VBS= 15V, external dead time> 400ns
TITripITrip to six switch to turn-off propagation delay3.2sVCC=VBS= 15V, ID=30A, V+=100V, TC = 25C
TF/T-C/RPost ITrip to six switch to turn-off clear time6.7 to 7.7msVCC=VBS= 15V, ID=30A, V+=100V
Rth(J-C)Thermal resistance, FET1.2 to 1.4C/W
Rth(C-S)Thermal resistance, C-S0.1C/WFlat, greased surface. Heatsink compound thermal conductivity 1W/m.
CDCreepage Distance3.5mmSee outline Drawings
RShuntShunt Resistance8.1 to 8.5mTC = 25C
TCoeffShunt Temperature Coefficient0 to 200ppm/C
PShuntShunt Power Dissipation4.5W-40C< TC <100C
TRangeShunt Temperature Range-20 to 125C
R25NTC Thermistor Resistance @ 25C97 to 103k
R125NTC Thermistor Resistance @ 125C2.25 to 2.80k
BNTC Thermistor B-constant (25-50C)4165 to 4335k
TRangeNTC Thermistor Temperature Range-20 to 125C

2410010130_Infineon-IRAM136-3023B_C3615258.pdf

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