1200V 100A SiC Power MOSFET HXY UF4C120070K4S-HXY N Channel Enhancement Mode for EV Battery Chargers
Key Attributes
Model Number:
UF4C120070K4S-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-40℃~+175℃
RDS(on):
90mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
2pF
Pd - Power Dissipation:
136W
Output Capacitance(Coss):
58pF
Input Capacitance(Ciss):
1.39nF
Gate Charge(Qg):
53nC
Mfr. Part #:
UF4C120070K4S-HXY
Package:
TO-247-4L
Product Description
Product Overview
The HUAXUANYANG UF4C120070K4S is a 3rd generation SiC Power MOSFET designed for high-efficiency power conversion. It features a 3rd generation SiC MOSFET technology, an optimized package with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed switching with low capacitances. Its fast intrinsic diode offers low reverse recovery (Qrr). This MOSFET is ideal for applications in renewable energy, EV battery chargers, high voltage DC/DC converters, and switch mode power supplies, offering reduced switching losses, minimized gate ringing, higher system efficiency, reduced cooling requirements, and increased power density.
Product Attributes
- Brand: HUAXUANYANG
- Model: UF4C120070K4S
- Technology: SiC Power MOSFET, N-Channel Enhancement Mode
- Package: TO-247H-4L
- Certifications: Halogen free, RoHS compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 A | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | 3.6 | V | VDS = VGS, ID = 5 mA | Fig. 11 |
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | A | VDS = 1200 V, VGS = 0 V | ||
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | ||
| Drain-Source On-State Resistance | RDS(on) | 75 | 90 | m | VGS = 15 V, ID = 20 A | Fig. 4, 5, 6 | |
| Transconductance | gfs | 12 | S | VDS= 20 V, IDS= 20 A | Fig. 7 | ||
| Input Capacitance | Ciss | 1390 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Output Capacitance | Coss | 58 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Reverse Transfer Capacitance | Crss | 2 | pF | VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV | Fig. 17, 18 | ||
| Diode Forward Voltage | VSD | 4.5 | V | VGS = -4 V, ISD = 10 A | Fig. 8, 9, 10 | ||
| Continuous Diode Forward Current | IS | 26 | A | VGS = -4 V, TJ = 25 C | Note 1 | ||
| Reverse Recover time | trr | 20 | ns | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 | ||
| Reverse Recovery Charge | Qrr | 254 | nC | VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 3600 A/s, TJ = 150 C | Note 1 | ||
| Thermal Resistance Junction to Case | RJC | 1.1 | C/W | Fig. 21 | |||
| Thermal Resistance Junction to Ambient | RJA | 40 | C/W |
2509181734_HXY-MOSFET-UF4C120070K4S-HXY_C48972081.pdf
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