1200V 50A IGBT Transistor HXY MOSFET APT50GF120B2RG-HXY for High Power Solar Inverter EV Charger and UPS
Key Attributes
Model Number:
APT50GF120B2RG-HXY
Product Custom Attributes
Td(off):
216ns
Pd - Power Dissipation:
600W
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
200nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
380ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
2.65mJ
Input Capacitance(Cies):
6.42nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
195pF
Mfr. Part #:
APT50GF120B2RG-HXY
Package:
TO-247P
Product Description
Product Overview
The APT50GF120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT50GF120B2RG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 1200 | V | |||
| IC | DC collector current(1) | TC = 25C | 100 | A | ||
| IC | DC collector current(1) | TC = 100C | 50 | A | ||
| ICM | Pulsed collector current | TC = 25C | 200 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 100 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 50 | A | ||
| IFM | Diode pulsed current | TC = 25C | 200 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | ±20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp ≤ 10µs, D < 0.010) TVJ = 25C | ±30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 600 | W | ||
| Ptot | Power Dissipation | TC = 100C | 300 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | °C | ||
| TSTG | Storage Temperature Range | -55 | +150 | °C | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 1200 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | 1.9 | 2.3 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175°C | 2.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A | 2.7 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175°C | 2.4 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 350.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = ±20V , VCE = 0V | - | ±100 | nA | |
| gfs | Transconductance | VGE = 20V, IC = 50A | 30 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 6420 | - | pF | |
| Coes | Output Capacitance | 195 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 42 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | 200 | - | nC | |
| Qge | Gate to Emitter charge | 46 | - | nC | ||
| Qgc | Gate to Collector charge | 75 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 600V IC= 50A, RG(off) = 10Ω | 55 | - | ns | |
| tr | Turn-On Rise Time | 32 | - | ns | ||
| td(off) | Turn-Off Delay Time | 216 | - | ns | ||
| tf | Turn-Off Fall Time | 38 | - | ns | ||
| Eon | Turn-on energy | 2.65 | - | mJ | ||
| Eoff | Turn-off energy | 1.8 | - | mJ | ||
| Ets | Total switching energy | 4.45 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 600 V, IF = 50 A, di/dt = 600 A/µS | 380 | - | ns | |
| Qrr | Reverse recovery charge | 2.31 | - | mC | ||
| Irrm | Peak reverse recovery current | 15.5 | - | A | ||
| Thermal Resistance | ||||||
| RθJA | Thermal resistance: junction - ambient | 40 | °C/W | |||
| RθJC | IGBT Thermal resistance: junction - case | 0.25 | - | °C/W | ||
| RθJC | Diode Thermal resistance: junction - case | 0.49 | - | °C/W | ||
2509181739_HXY-MOSFET-APT50GF120B2RG-HXY_C49003483.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
