High Reliability P Channel HXY MOSFET IRFR5305T with Low Gate Charge and RDS ON Characteristics
Key Attributes
Model Number:
IRFR5305T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 P-Channel
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
2.46nF
Gate Charge(Qg):
48nC
Mfr. Part #:
IRFR5305T
Package:
TO-252-2L
Product Description
Product Overview
The IRFR5305T is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Product ID: IRFR5305T
- Origin: Shenzhen
- Package: TO-252-2L (TO-252-2(DPAK))
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | @ TA=25 | -20 | A | ||
| Current-Pulsed (Note 1) | IDM | -48 | A | |||
| Maximum Power Dissipation | PD | @ TA=25 | 40 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 20 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V,VGS=0V | -1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250μA | -1 | -1.8 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-10A | 64 | 72 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 90 | 100 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V,ID=-20A | 5 | S | ||
| Input Capacitance | Clss | VDS=-30V,VGS=0V, F=1.0MHz | 2460 | PF | ||
| Output Capacitance | Coss | VDS=-30V,VGS=0V, F=1.0MHz | 220 | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V,VGS=0V, F=1.0MHz | 155 | PF | ||
| Turn-on Delay Time | td(on) | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 14 | nS | ||
| Turn-on Rise Time | tr | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 20 | nS | ||
| Turn-Off Delay Time | td(off) | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 40 | nS | ||
| Turn-Off Fall Time | tf | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 19 | nS | ||
| Total Gate Charge | Qg | VDS=-30V,ID=-20A,VGS=-10V | 48 | nC | ||
| Gate-Source Charge | Qgs | VDS=-30V,ID=-20A,VGS=-10V | 11 | nC | ||
| Gate-Drain Charge | Qg | VDS=-30V,ID=-20A,VGS=-10V | 10 | nC | ||
| Body Diode Reverse Recovery Time | Trr | IF=-20A, dI/dt=100A/μs | 40 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-20A, dI/dt=100A/μs | 56 | nC | ||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=-1A | -0.72 | -1 | V | |
2509181604_HXY-MOSFET-IRFR5305T_C5261062.pdf
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