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quality Power MOSFET HXY MOSFET HXY30N06DF N Channel Enhancement Mode with Low Gate Voltage and On Resistance factory
quality Power MOSFET HXY MOSFET HXY30N06DF N Channel Enhancement Mode with Low Gate Voltage and On Resistance factory

Power MOSFET HXY MOSFET HXY30N06DF N Channel Enhancement Mode with Low Gate Voltage and On Resistance

Key Attributes
Model Number: HXY30N06DF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
49.4pF
Number:
1 N-channel
Output Capacitance(Coss):
58.5pF
Pd - Power Dissipation:
34.7W
Input Capacitance(Ciss):
1.148nF
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
HXY30N06DF
Package:
DFN3X3-8L
Product Description

Product Overview

The HXY30N06DF is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.

Product Attributes

  • Brand: HXY
  • Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
  • Package: DFN3X3-8L

Technical Specifications

ParameterSymbolConditionMin.Typ.Max.Units
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=250A60--V
Zero Gate Voltage Drain CurrentIDSSVDS=60V, VGS = 0V--1.0A
Gate to Body Leakage CurrentIGSSVDS=0V, VGS = 20V--100nA
Gate Threshold VoltageVGS(th)VDS=VGS, ID=250A1.01.62.5V
Static Drain-Source on-ResistanceRDS(on)VGS=10V, ID=5A-2840m
Static Drain-Source on-ResistanceRDS(on)VGS=4.5V, ID=3A-3650m
Input CapacitanceCissVDS=25V, VGS=0V, f=1.0MHz-1148-pF
Output CapacitanceCossVDS=25V, VGS=0V, f=1.0MHz-58.5-pF
Reverse Transfer CapacitanceCrssVDS=25V, VGS=0V, f=1.0MHz-49.4-pF
Total Gate ChargeQgVDS=30V, ID=2.5A, VGS=10V-20.3-nC
Gate-Source ChargeQgsVDS=30V, ID=2.5A, VGS=10V-3.7-nC
Gate-Drain(Miller) ChargeQgdVDS=30V, ID=2.5A, VGS=10V-5.3-nC
Turn-on Delay Timetd(on)VDS=30V, ID=5A, RG=1.8, VGS=10V-7.6-ns
Turn-on Rise TimetrVDS=30V, ID=5A, RG=1.8, VGS=10V-20-ns
Turn-off Delay Timetd(off)VDS=30V, ID=5A, RG=1.8, VGS=10V-15-ns
Turn-off Fall TimetfVDS=30V, ID=5A, RG=1.8, VGS=10V-24-ns
Maximum Continuous Drain to Source Diode Forward CurrentIS---5A
Maximum Pulsed Drain to Source Diode Forward CurrentISM---15A
Drain to Source Diode Forward VoltageVSDVGS=0V, IS=5A--1.2V
Body Diode Reverse Recovery TimetrrIF=5A, dI/dt=100A/s-29-ns
Body Diode Reverse Recovery ChargeQrrIF=5A, dI/dt=100A/s-43-nC
Drain-Source VoltageVDS---60V
Gate-Source VoltageVGS---20V
Continuous Drain Current (VGS @ 10V, TA=25)ID@TA =25---15A
Continuous Drain Current (VGS @ 10V, TA=70)ID@TA=70---11A
Pulsed Drain CurrentIDM---46A
Single Pulse Avalanche EnergyEAS---25.5mJ
Avalanche CurrentIAS---20A
Total Power Dissipation (TC=25)PD@TC=25---34.7W
Storage Temperature RangeTSTG--55-175
Operating Junction Temperature RangeTJ--55-175
Thermal Resistance Junction-AmbientRJA--62-/W

2511171526_HXY-MOSFET-HXY30N06DF_C3033462.pdf

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