N Channel Enhancement Mode HXY MOSFET SI2318 with Low Gate Charge and Excellent On State Resistance
Key Attributes
Model Number:
SI2318
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
30pF@20V
Number:
1 N-channel
Pd - Power Dissipation:
1.56W
Input Capacitance(Ciss):
340pF@20V
Gate Charge(Qg):
5.8nC@20V
Mfr. Part #:
SI2318
Package:
SOT-23
Product Description
Product Overview
The SI2318 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent On-State Resistance (RDS(ON)) and low gate charge, capable of operating with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Model: SI2318
- Package: SOT-23
- Marking: 2318
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TC=25) | 5 | A | |||
| ID | Drain Current Continuous (TC=70 ) | 4.2 | A | |||
| PD | Power Dissipation (TC=25) | 1.56 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction to ambient | 80 | /W | |||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V (TA=25) | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=40V, VGS=0V (TA=125) | 100 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=20V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 0.7 | 1.9 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=5A | 30 | 38 | m | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=4A | 36 | 52 | m | |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | 340 | pF | ||
| Coss | Output Capacitance | VDS=20V, VGS=0V, f=1MHz | 60 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=20V, VGS=0V, f=1MHz | 30 | pF | ||
| Rg | Gate Resistance | f=1MHz | 7.8 | |||
| Qg | Total Gate Charge | VDS=20V, ID=5A, VGS=10V | 5.8 | nC | ||
| Qgs | Gate Source Charge | VDS=20V, ID=5A, VGS=10V | 0.4 | nC | ||
| Qgd | Gate Drain Charge | VDS=20V, ID=5A, VGS=10V | 2 | nC | ||
| Switching Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| td(on) | Turn on Delay Time | VDD=20V, ID=3.5A, RG=1, VGS=4.5V | 4.1 | ns | ||
| tr | Turn on Rise Time | VDD=20V, ID=3.5A, RG=1, VGS=4.5V | 11.6 | ns | ||
| td(off) | Turn Off Delay Time | VDD=20V, ID=3.5A, RG=1, VGS=4.5V | 24 | ns | ||
| tf | Turn Off Fall Time | VDD=20V, ID=3.5A, RG=1, VGS=4.5V | 7.6 | ns | ||
| Source Drain Diode Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| ISD | Source drain current(Body Diode) | TA=25 | 1.75 | A | ||
| VSD | Forward on voltage | Tj=25, ISD=3.5A, VGS=0V | 0.79 | 1.2 | V | |
2509181605_HXY-MOSFET-SI2318_C5337198.pdf
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