Power Conversion Solutions Featuring HXY MOSFET HC3M0015065K SiC N Channel Enhancement Mode Device
Key Attributes
Model Number:
HC3M0015065K
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-40℃~+175℃
RDS(on):
21mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
289pF
Input Capacitance(Ciss):
5.011nF
Pd - Power Dissipation:
416W
Gate Charge(Qg):
188nC
Mfr. Part #:
HC3M0015065K
Package:
TO-247-4L
Product Description
HC3M0015065K SiC Power MOSFET
The HC3M0015065K is a 3rd generation SiC MOSFET featuring an N-Channel Enhancement Mode design. Optimized for high-efficiency power conversion, it offers high blocking voltage with low on-resistance and high-speed switching capabilities. Its advanced technology reduces switching losses, minimizes gate ringing, and allows for increased power density and system switching frequency. The device is suitable for demanding applications such as EV chargers, solar inverters, UPS, SMPS, and DC/DC converters.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Symbol | Parameter | Value | Unit | Note |
| Maximum Ratings | ||||
| VDSmax | Drain - Source Voltage | 650 | V | |
| VGSmax | Gate - Source voltage | -8/+19 | V | Note 1 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 25C | 120 | A | Fig. 19, Note 2 |
| ID | Continuous Drain Current, VGS = 15 V, TC = 100C | 96 | A | |
| ID(pulse) | Pulsed Drain Current, Pulse width tP limited by Tjmax | 418 | A | |
| PD | Power Dissipation, TC=25C, TJ = 175 C | 416 | W | Fig. 20 |
| TJ , Tstg | Operating Junction and Storage Temperature | -40 to +175 | C | |
| TL | Solder Temperature, 1.6mm (0.063) from case for 10s | 260 | C | |
| Md | Mounting Torque, (M3 or 6-32 screw) | 1 | Nm | lbf-in |
| Electrical Characteristics | ||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS = 0 V, ID = 100 A |
| VGS(th) | Gate Threshold Voltage | 1.8 / 2.3 / 3.6 | V | VDS = VGS, ID = 15.5 mA, Fig. 11 (TJ=25C / TJ=175C) |
| IDSS | Zero Gate Voltage Drain Current | 1 / 50 | A | VDS = 650 V, VGS = 0 V (Typ./Max.) |
| IGSS | Gate-Source Leakage Current | 10 / 250 | nA | VGS = 15 V, VDS = 0 V (Typ./Max.) |
| RDS(on) | Drain-Source On-State Resistance | 10.5 / 15 / 21 | m | VGS = 15 V, ID = 55.8A, Fig. 4, 5,6 (TJ=25C / TJ=175C) |
| gfs | Transconductance | 42 / 40 | S | VDS= 20 V, IDS= 55.8 A, Fig. 7 (TJ=25C / TJ=175C) |
| Ciss | Input Capacitance | 5011 | pF | VGS = 0 V, VDS = 400 V f = 100 Khz VAC = 25 mV Fig. 17, 18 |
| Coss | Output Capacitance | 289 | pF | |
| Crss | Reverse Transfer Capacitance | 31 | pF | |
| Co(er) | Effective Output Capacitance (Energy Related) | 357 | pF | Note: 3 |
| Co(tr) | Effective Output Capacitance (Time Related) | 516 | pF | Note: 3 |
| Eoss | Coss Stored Energy | 29 | J | Fig. 16 |
| EON | Turn-On Switching Energy (Body Diode) | 401 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = Internal Body Diode of MOSFET Fig. 25 |
| EOFF | Turn Off Switching Energy (Body Diode) | 254 | J | |
| EON | Turn-On Switching Energy (External Diode) | 234 | J | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 , L= 57.6 H, TJ = 175C FWD = External SiC DIODE Fig. 25 |
| EOFF | Turn Off Switching Energy (External Diode) | 303 | J | |
| td(on) | Turn-On Delay Time | 23 | ns | VDD = 400 V, VGS = -4 V/15 V ID = 55.8 A, RG(ext) = 5 , L= 57.6 H Timing relative to VDS Inductive load Fig. 26 |
| tr | Rise Time | 32 | ns | |
| td(off) | Turn-Off Delay Time | 57 | ns | |
| tf | Fall Time | 15 | ns | |
| RG(int) | Internal Gate Resistance | 1.5 | f = 1 MHz, VAC= 25 mV | |
| Qgs | Gate to Source Charge | 53 | nC | VDS = 400 V, VGS = -4 V/15 V ID = 55.8 A Per IEC60747-8-4 pg 21 Fig. 12 |
| Qgd | Gate to Drain Charge | 58 | nC | |
| Qg | Total Gate Charge | 188 | nC | |
| Reverse Diode Characteristics | ||||
| VSD | Diode Forward Voltage | 4.7 / 4.2 | V | VGS = -4 V, ISD = 27.9 A, TJ = 25 C / TJ = 175 C Fig. 8, 9, 10 |
| IS | Continuous Diode Forward Current | 79 | A | VGS = -4 V, TC = 25C |
| IS, pulse | Diode pulse Current | 223 | A | VGS = -4 V, pulse width tP limited by Tjmax |
| trr | Reverse Recover time | 22 / 26 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Qrr | Reverse Recovery Charge | 510 / 432 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Irrm | Peak Reverse Recovery Current | 39 / 28 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V dif/dt = 4000 A/s / 2500 A/s, TJ = 175 C |
| Thermal Characteristics | ||||
| RJC | Thermal Resistance from Junction to Case | 0.35 | C/W | Fig. 21 |
| RJA | Thermal Resistance From Junction to Ambient | 40 | C/W | |
2509181522_HXY-MOSFET-HC3M0015065K_C19723853.pdf
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