Low Gate Charge P Channel MOSFET HXY MOSFET FDS4435BZ Suitable for Battery Protection and Switching
Key Attributes
Model Number:
FDS4435BZ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
156pF
Number:
1 P-Channel
Output Capacitance(Coss):
183pF
Input Capacitance(Ciss):
1.33nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
FDS4435BZ
Package:
SOP-8
Product Description
Product Overview
The FDS4435BZ is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 2.5V. This device is ideal for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG HXY
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: SOP-8 (SOIC-8)
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Drain Current3, VGS @ 10V | -11 | A | |||
| IDM | Pulsed Drain Current1 | -40 | A | |||
| PD@TA=25 | Total Power Dissipation | 3.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Rthj-a | Maximum Thermal Resistance, Junction-ambient3 | 33.8 | /W | |||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250µA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS= -30V, VGS=0V | -1 | µA | ||
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±20V | ±100 | nA | ||
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250µA | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance Note3 | VGS= -10V, ID= -10A | 13 | 16 | Ω | |
| RDS(on) | Static Drain-Source on-Resistance Note3 | VGS= -4.5V, ID= -5A | 18 | 27 | Ω | |
| Dynamic Characteristic | ||||||
| Ciss | Input Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | 1330 | pF | ||
| Coss | Output Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | 183 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS= -15V, VGS=0V, f=1.0MHz | 156 | pF | ||
| Qg | Total Gate Charge | VDS= -15V, ID= -5A, VGS= -10V | 22 | nC | ||
| Qgs | Gate-Source Charge | VDS= -15V, ID= -5A, VGS= -10V | 1.0 | nC | ||
| Qgd | Gate-Drain(“Miller”) Charge | VDS= -15V, ID= -5A, VGS= -10V | 1.8 | nC | ||
| Switching Characteristic | ||||||
| td(on) | Turn-on Delay Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 9 | ns | ||
| tr | Turn-on Rise Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 13 | ns | ||
| td(off) | Turn-off Delay Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 48 | ns | ||
| tf | Turn-off Fall Time | VDD= -15V, ID= -10A, VGS=-10V, RGEN=2.5Ω | 20 | ns | ||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | -11 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | -40 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -15A | -0.8 | -1.2 | V | |
| trr | Reverse Recovery Time | TJ=25°C, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | 64 | ns | ||
| Qrr | Reverse Recovery Charge | TJ=25°C, VDD= -24V,IF=-2.8A, dI/dt=-100A/μs | 25 | nC | ||
2509181604_HXY-MOSFET-FDS4435BZ_C5261056.pdf
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