High Current Handling N Channel MOSFET HXY MOSFET AON7400A HXY with 25A continuous drain current rating
Key Attributes
Model Number:
AON7400A-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
59W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
AON7400A-HXY
Package:
DFN3x3-8L
Product Description
Product Description
The AON7400A utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: China
- Material: N-Channel Enhancement Mode MOSFET
- Package: DFN3X3-8L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 35 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 25 | A | |||
| IDM | Pulsed Drain Current | 112 | A | |||
| EAS | Single Pulse Avalanche Energy | 24.2 | mJ | |||
| IAS | Avalanche Current | 22 | A | |||
| PD@TC=25 | Total Power Dissipation | 37.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 4 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V,ID=30A | 7.5 | 10 | Ω | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V,ID=15A | 11 | 18 | Ω | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID =250uA | 1.2 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=24V,VGS=0V,TJ=25 | 1 | µA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V,ID=30A | 34 | S | ||
| Rg | Gate Resistance | VDS=0V,VGS=0V , f=1MHz | 1.8 | Ω | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V,VGS=4.5V,ID=15A | 9.8 | nC | ||
| Qgs | Gate-Source Charge | 4.2 | ||||
| Qgd | Gate-Drain Charge | 3.6 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V,VGS=10V, RG=3.3Ω ID=15A | 4 | ns | ||
| Tr | Rise Time | 8 | ||||
| Td(off) | Turn-Off Delay Time | 31 | ||||
| Tf | Fall Time | 4 | ||||
| Ciss | Input Capacitance | VDS=15V,VGS=0V,f=1MHz | 940 | pF | ||
| Coss | Output Capacitance | 131 | ||||
| Crss | Reverse Transfer Capacitance | 109 | ||||
| IS | Continuous Source Current | VG=VD=0V,Force Current | 43 | A | ||
| ISM | Pulsed Source Current | 112 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V | ||
| trr | Reverse Recovery Time | IF=30A, dI/ dt=100A/µs, TJ=25 | 8.5 | nS | ||
| Qrr | Reverse Recovery Charge | 2.2 | nC |
2509181724_HXY-MOSFET-AON7400A-HXY_C22367274.pdf
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