Low Gate Voltage P Channel MOSFET HXY MOSFET IRFR5305TRPBF HXY for Switching and Battery Protection
Key Attributes
Model Number:
IRFR5305TRPBF-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
72mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.46nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
48nC@30V
Mfr. Part #:
IRFR5305TRPBF-HXY
Package:
TO-252-2L
Product Description
Product Overview
The IRFR5305TRPBF is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications, offering advantages like high power dissipation and a wide operating temperature range.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Product ID: IRFR5305TRPBF
- Package: TO-252-2L (TO-252-2(DPAK))
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | TA=25 | -60 | V | |||
| Gate-Source Voltage | ±20 | V | ||||
| Drain Current-Continuous | ID | @TA=25 | -20 | A | ||
| Current-Pulsed | IDM | (Note 1) | -48 | A | ||
| Maximum Power Dissipation | PD | @TA=25 | 40 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 20 | /W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V,VGS=0V | -1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | -1.8 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-10A | 64 | 72 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-10A | 90 | 100 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V,ID=-20A | 5 | S | ||
| Input Capacitance | Clss | VDS=-30V,VGS=0V, F=1.0MHz | 2460 | PF | ||
| Output Capacitance | Coss | VDS=-30V,VGS=0V, F=1.0MHz | 220 | PF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V,VGS=0V, F=1.0MHz | 155 | PF | ||
| Turn-on Delay Time | td(on) | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 14 | nS | ||
| Turn-on Rise Time | tr | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 20 | nS | ||
| Turn-Off Delay Time | td(off) | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 40 | nS | ||
| Turn-Off Fall Time | tf | VDS=-30V,VGS=-10V,RGEN=3Ω, ID=1A | 19 | nS | ||
| Total Gate Charge | Qg | VDS=-30V,ID=-20A,VGS=-10V | 48 | nC | ||
| Gate-Source Charge | Qgs | VDS=-30V,ID=-20A,VGS=-10V | 11 | nC | ||
| Gate-Drain Charge | Qg | VDS=-30V,ID=-20A,VGS=-10V | 10 | nC | ||
| Body Diode Reverse Recovery Time | Trr | IF=-20A, dI/dt=100A/µs | 40 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-20A, dI/dt=100A/µs | 56 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A (Note 3) | -0.72 | -1 | V | |
2509181740_HXY-MOSFET-IRFR5305TRPBF-HXY_C6285774.pdf
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