RU20P7C P Channel Power MOSFET Featuring Low On Resistance and Lead Free RoHS Compliant Package
Key Attributes
Model Number:
RU20P7C
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
20mΩ@4.5V;30mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
640pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
RU20P7C
Package:
SOT-23-3
Product Description
Product Overview
The RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient load switching and power management applications. It features a super high-density cell design, offering low On-Resistance of 20m (Typ.) at VGS=-4.5V and 30m (Typ.) at VGS=-2.5V. This MOSFET is reliable, rugged, and available in lead-free and green devices (RoHS Compliant). It is suitable for battery protection and general power management circuits.
Product Attributes
- Brand: Ruichips Semiconductor
- Origin: Shenzhen City, China
- Product Type: P-Channel Advanced Power MOSFET
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
- Package: SOT23-3
- Device Marking: RU20P7C
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Diode Continuous Forward Current | IS | TA=25C | -1 | A | ||
| Pulse Drain Current | IDP | TA=25C | -20 | A | ||
| Tested Continuous Drain Current | ID | VGS=-10V, TA=25C | -5 | A | ||
| Tested Continuous Drain Current | ID | VGS=-10V, TA=70C | -3.1 | A | ||
| Maximum Power Dissipation | PD | TA=25C, Mounted on Large Heat Sink | -5 | A | ||
| Maximum Power Dissipation | PD | TA=25C, Mounted on Large Heat Sink | 1.3 | W | ||
| Maximum Power Dissipation | PD | TA=70C, Mounted on Large Heat Sink | 0.8 | W | ||
| Thermal Resistance-Junction to Case | RJC | C/W | ||||
| Thermal Resistance-Junction to Ambient | RJA | When mounted on 1 inch square copper board, t10sec | 100 | C/W | ||
| Avalanche Energy, Single Pulsed | EAS | Limited by TJmax. Starting TJ = 25C. | 300 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A | -20 | V | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=-250A, TJ=125C | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=-250A | -0.4 | -0.7 | -1.1 | V |
| Gate Leakage Current | IGSS | VDS=-20V, VGS=10V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=-2.5V, IDS=-4A | 38 | m | ||
| Drain-Source On-state Resistance | RDS(ON) | VGS=-4.5V, IDS=-5A | 20 | m | ||
| Diode Forward Voltage | VSD | ISD=-5A, VGS=0V | -1.2 | V | ||
| Reverse Recovery Time | trr | ISD=-1A, dlSD/dt=100A/s | 17 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=-5A, dlSD/dt=100A/s | 23 | nC | ||
| Gate Resistance | RG | 0.9 | ||||
| Input Capacitance | Ciss | VGS=0V,VDS=0V,F=1MHz | 640 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-10V, Frequency=1.0MHz | 135 | pF | ||
| Reverse Transfer Capacitance | Crss | 65 | pF | |||
| Turn-on Delay Time | td(ON) | VDD=-10V, RL=3.8, IDS=-5A, VGEN=-4.5V, RG=6 | 20 | ns | ||
| Turn-on Rise Time | tr | VDD=-10V, RL=3.8, IDS=-5A, VGEN=-4.5V, RG=6 | 28 | ns | ||
| Turn-off Delay Time | td(OFF) | VDS=-16V, VGS=-10V, IDS=-5A | 45 | ns | ||
| Turn-off Fall Time | tf | VDS=-16V, VGS=-10V, IDS=-5A | 21 | ns | ||
| Total Gate Charge | Qg | VGS=10V, VDS=0V | 10 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=0V | 2 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=0V | 3 | nC | ||
| Ordering and Marking Information | ||||||
| Package | SOT23-3 | |||||
| Packaging Quantity | 3000 | |||||
| Reel Size | 7 | |||||
| Tape width | 8mm | |||||
2409302201_INJOINIC-RU20P7C_C605444.pdf
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