SiC MOSFET 650 Volt 123 Amp N Channel HXY MOSFET NVHL040N65S3F-HXY Enhancement Mode Device
Key Attributes
Model Number:
NVHL040N65S3F-HXY
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
49A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
242W
Input Capacitance(Ciss):
1.823nF
Output Capacitance(Coss):
190pF
Gate Charge(Qg):
96nC
Mfr. Part #:
NVHL040N65S3F-HXY
Package:
TO-247
Product Description
Product Overview
The HUAXUANYANG HXY NVHL040N65S3F is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode device featuring optimized package design with a separate driver source pin. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse recovery. This RoHS compliant and halogen-free component is designed to reduce switching losses, minimize gate ringing, improve system efficiency, reduce cooling requirements, increase power density, and enable higher system switching frequencies.
Product Attributes
- Brand: HUAXUANYANG
- Model: NVHL040N65S3F
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Drain-source voltage | VDS | 650 | V | |
| Continuous drain current | ID | 123 | A | TC = 25C |
| Continuous drain current | ID | 49 | A | TC = 100C |
| Pulsed drain current | ID pulse | 242 | A | TC = 25C, tp limited by Tjmax |
| Gate-Source voltage | VGS | -10/+25 | V | |
| Power dissipation | Ptot | 1000 | W | TC = 25C |
| Operating junction and storage temperature | Tj , Tstg | -55...+175 | C | |
| Avalanche energy, single pulse | EAS | 49 | mJ | L=10mH |
| Thermal Resistance | ||||
| Junction case. Max | RthJC | 0.62 | C/W | |
| Junction ambient. Max | RthJA | 30 | C/W | |
| Static Characteristic | ||||
| Drain-source on-state resistance | RDS(on) | 26 | m | VGS=20V, ID=17.6A, Tj=25C |
| Drain-source on-state resistance | RDS(on) | 40 | m | VGS=20V, ID=17.6A, Tj=175C |
| Zero gate voltage drain current | IDSS | 250 | A | VDS=650V,VGS=0V, Tj=25C |
| Zero gate voltage drain current | IDSS | 45 | A | VDS=650V,VGS=0V, Tj=175C |
| Gate threshold voltage | VGS(th) | 6 | V | VDS=VGS,ID=7mA |
| Gate-source leakage current | IGSS | 10 | nA | VGS=20V, VDS=0V |
| Dynamic Characteristic | ||||
| Input Capacitance | Ciss | 1823 | pF | VDS=20V,VGS=0V, f=1MHz |
| Output Capacitance | Coss | 188 | pF | VDS=20V,VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 19 | pF | VDS=20V,VGS=0V, f=1MHz |
| Gate Total Charge | QG | 49 | nC | VGS=20V, ID=17.6A |
| Gate-Source charge | Qgs | 15 | nC | VGS=20V, ID=17.6A |
| Gate-Drain charge | Qgd | 1.7 | nC | VGS=20V, ID=17.6A |
| Turn-on delay time | td(on) | 25 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Rise time | tr | 15 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Turn-off delay time | td(off) | 19 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Fall time | tf | 15 | ns | VDD = 400V, VGS = -5/+20V, ID = 17.6A, RG = 10, L = 100uH |
| Turn-On Switching Energy | EON | 156 | J | VDS = 400V, VGS = -5/20V, ID = 17.6A |
| Turn-Off Switching Energy | EOFF | 40 | J | VDS = 400V, VGS = -5/20V, ID = 17.6A |
| Body Diode Characteristic | ||||
| Body Diode Forward Voltage | VSD | 2.6 | V | VGS=0V,ISD=8.8A, TJ=25C |
| Body Diode Forward Voltage | VSD | 3.2 | V | VGS=0V,ISD=8.8A, TJ=175C |
| Body Diode Reverse Recovery Time | trr | 15 | ns | VR = 400V, ID = 17.6A, di/dt = 1000A/S |
| Body Diode Reverse Recovery Charge | Qrr | 40 | nC | VR = 400V, ID = 17.6A, di/dt = 1000A/S |
| Applications | ||||
| Applications | Renewable energy, EV battery chargers, High voltage DC/DC converters, Switch Mode Power Supplies | |||
2509181733_HXY-MOSFET-NVHL040N65S3F-HXY_C48972069.pdf
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