RoHS Compliant N Channel MOSFET IPS FTB07N08N with 85V Drain to Source Voltage and 120A Drain Current
Key Attributes
Model Number:
FTB07N08N
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
253pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
4.572nF@25V
Pd - Power Dissipation:
208W
Gate Charge(Qg):
74.4nC@10V
Mfr. Part #:
FTB07N08N
Package:
TO-263-2
Product Description
Product Overview
The FTB07N08N is a N-Channel MOSFET from InPower Semiconductor Co., Ltd. This component is designed for applications requiring low ON resistance and low gate charge, featuring a continuous drain current of 120A and a drain-to-source voltage of 85V. It is RoHS compliant and suitable for use in adaptors, chargers, and SMPS (Switched-Mode Power Supplies).
Product Attributes
- Brand: IPS
- Package and Finish: Lead Free
- Certification: RoHS Compliant
- Origin: InPower Semiconductor Co., Ltd.
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | -- | -- | 85 | V | |
| ID | Continuous Drain Current | -- | -- | 120 | A | |
| ID | Continuous Drain Current TC =100 | -- | -- | 85 | A | |
| IDM | Pulsed Drain Current (NOTE *1) | -- | -- | 480 | A | |
| PD | Power Dissipation | -- | -- | 208 | W | |
| Derating Factor above 25 | -- | 1.8 | -- | W/ | ||
| VGS | Gate-to-Source Voltage | -- | -- | 20 | V | |
| EAS | Single Pulse Avalanche Energy(NOTE *2) | -- | 650.25 | -- | mJ | |
| TL | Maximum Temperature for Soldering | -- | -- | 300 | ||
| TJ and TSTG | Operating Junction and Storage Temperature Range | -55 | -- | 150 | ||
| Thermal Resistance | ||||||
| RJC | Junction-to-Case | -- | -- | 0.55 | /W | Water cooled heatsink, PD adjusted for a peak junction temperature of +150. |
| RJA | Junction-to-Ambient | -- | -- | 65.2 | /W | 1 cubic foot chamber, free air. |
| OFF Characteristics (TC=25 unless otherwise specified) | ||||||
| BVDSS | Drain-to-Source Breakdown Voltage | 85 | -- | -- | V | VGS=0V, ID=250A |
| IDSS | Drain-to-Source Leakage Current | -- | -- | 1 | A | VDS=85V, VGS=0V TJ=25 |
| -- | -- | 100 | A | VDS=68V, VGS=0V TJ=100 | ||
| IGSS | Gate-to-Source Forward Leakage | -- | -- | +100 | nA | VGS=+20V |
| Gate-to-Source Reverse Leakage | -- | -- | -100 | nA | VGS= -20V | |
| ON Characteristics (TJ=25 unless otherwise specified) | ||||||
| RDS(ON) | Static Drain-to-Source On-Resistance | -- | 6.0 | 7.5 | m | VGS=10V, ID=60A |
| VGS(TH) | Gate Threshold Voltage | 2 | -- | 4 | V | VDS=VGS,ID=250A |
| Dynamic Characteristics (Essentially independent of operating temperature) | ||||||
| Ciss | Input Capacitance | -- | 4572 | -- | pF | VGS= 0V,VDS = 25V f =1.0MHz |
| Coss | Output Capacitance | -- | 494.4 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 253 | -- | pF | |
| Qg | Total Gate Charge | -- | 74.4 | -- | nC | ID=60A,VDD=64V VGS = 10V |
| Qgs | Gate-to-Source Charge | -- | 21.9 | -- | nC | |
| Qgd | Gate-to-Drain (Miller) Charge | -- | 22.4 | -- | nC | |
| Resistive Switching Characteristics (Essentially independent of operating temperature) | ||||||
| td(ON) | Turn-on Delay Time | -- | 35.7 | -- | ns | VDD=40V, ID=60A, VGS=10V RG=6 |
| trise | Rise Time | -- | 65.6 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 67.2 | -- | ns | |
| tfall | Fall Time | -- | 21.87 | -- | ns | |
| Source-Drain Diode Characteristics (Tc=25 unless otherwise specified) | ||||||
| IS | Continuous Source Current (Body Diode) | -- | -- | 120 | A | TC=25 |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 480 | A | |
| VSD | Diode Forward Voltage | -- | -- | 1.2 | V | ISD=60A, VGS=0V |
| trr | Reverse Recovery Time | -- | -- | 72 | ns | IS= 20A di/dt=100A/us |
| Qrr | Reverse Recovery Charge | -- | -- | 126 | nC | Pulse width 300s; duty cycle 2% |
2411220027_IPS-FTB07N08N_C527102.pdf
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