HXY MOSFET IRG8P60N120KD-EPBF-HXY IGBT device with RoHS compliance and performance in TO-247 package
Key Attributes
Model Number:
IRG8P60N120KD-EPBF-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IRG8P60N120KD-EPBF-HXY
Package:
TO-247
Product Description
Product Overview
The IRG8P60N120KD-EPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 Qualified and designed for high-temperature operation up to 175. Available in RoHS compliant, Halogen Free, and Green Devices. This product is supplied in a TO-247 package and is ideal for applications requiring reliable and rugged performance.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free, Green Devices
Technical Specifications
| Parameter | Value | Unit | Description |
| Product Name | IRG8P60N120KD-EPBF | Insulated Gate Bipolar Transistor | |
| Technology | T-FS (Trench and Field Stop) | Advanced technology for reduced losses and improved performance | |
| Package Type | TO-247 | ||
| Device Per Unit | Tube | 30 | |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC @TC=25C | 80 | A | Collector Current |
| IC @TC=100C | 40 | A | Collector Current |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typical) |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| PD @TC=25C | 441 | W | Power Dissipation |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case Thermal Resistance |
| RJC (Diode) | 0.80 | /W | Junction-to-Case Thermal Resistance |
| RJA | 40 | /W | Junction-to-Ambient Thermal Resistance |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage (Min - Max) |
| ICES | 10 | A | Collector-Emitter Leakage Current (Max) |
| Cies | 3980 | pF | Input Capacitance (Typical) |
| Qg | 346 | nC | Gate Charge (Typical) |
| td(on) @TJ=25C | 25 | ns | Turn-on Delay Time (Typical) |
| tr @TJ=25C | 28 | ns | Rise Time (Typical) |
| td(off) @TJ=25C | 262 | ns | Turn-Off Delay Time (Typical) |
| tf @TJ=25C | 149 | ns | Fall Time (Typical) |
| Eon @TJ=25C | 1.30 | mJ | Turn-On Switching Loss (Typical) |
| Eoff @TJ=25C | 2.30 | mJ | Turn-Off Switching Loss (Typical) |
| Ets @TJ=25C | 3.60 | mJ | Total Switching Loss (Typical) |
| td(on) @TJ=175C | 26 | ns | Turn-on Delay Time (Typical) |
| tr @TJ=175C | 35 | ns | Rise Time (Typical) |
| td(off) @TJ=175C | 331 | ns | Turn-Off Delay Time (Typical) |
| tf @TJ=175C | 224 | ns | Fall Time (Typical) |
| Eon @TJ=175C | 2.20 | mJ | Turn-On Switching Loss (Typical) |
| Eoff @TJ=175C | 3.70 | mJ | Turn-Off Switching Loss (Typical) |
| Ets @TJ=175C | 5.90 | mJ | Total Switching Loss (Typical) |
| Trr @TJ=25C | 94 | ns | Reverse Recovery Time (Typical) |
| Qrr @TJ=25C | 225 | nC | Reverse Recovery Charge (Typical) |
| Irrm @TJ=25C | 9.7 | A | Reverse Recovery Current (Typical) |
| Trr @TJ=175C | 125 | ns | Reverse Recovery Time (Typical) |
| Qrr @TJ=175C | 277 | nC | Reverse Recovery Charge (Typical) |
| Irrm @TJ=175C | 11.2 | A | Reverse Recovery Current (Typical) |
Applications
PTC, Motor drives, OBC
2509181737_HXY-MOSFET-IRG8P60N120KD-EPBF-HXY_C49003397.pdf
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