HXY MOSFET HXY3407AI P Channel MOSFET Offering Low Gate Threshold and Excellent Switching Performance
Key Attributes
Model Number:
HXY3407AI
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
56mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
1.32W
Input Capacitance(Ciss):
650pF
Gate Charge(Qg):
7.3nC@4.5V
Mfr. Part #:
HXY3407AI
Package:
SOT-23
Product Description
Product Overview
The HXY3407AI is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, including PWM applications and load switching. It features high power and current handling capabilities and is a lead-free product.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Product ID: HXY3407AI
- Package: SOT-23
- Certifications: Lead free product is acquired
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25 , ID=-1mA | -0.02 | V/ | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-3A | 48 | 56 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-1.5A | 78 | 90 | m | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 | -1.5 | -2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | -4.32 | mV/ | |||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS=-5V , ID=-3A | 48 | S | ||
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | 7.3 | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-4.5V , ID=-3A | 24 | nC | ||
| Gate-Source Charge | Qgs | 5.22 | nC | |||
| Gate-Drain Charge | Qgd | 1.25 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V , VGS=-10V , RG=3.3 ID=-1A | 2.3 | ns | ||
| Rise Time | Tr | 18.4 | ns | |||
| Turn-Off Delay Time | Td(off) | 11.4 | ns | |||
| Fall Time | Tf | 39.4 | ns | |||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 463 | 650 | pF | |
| Output Capacitance | Coss | 82 | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | 68 | 95 | pF | ||
| Continuous Source Current | IS | VG=VD=0V , Force Current | -3.2 | A | ||
| Pulsed Source Current | ISM | -13 | A | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1 | V |
| Parameter | Limit | Unit |
| Drain-Source Voltage | -30 | V |
| Gate-Source Voltage | 20 | V |
| Drain Current-Continuous | -4.1 | A |
| Drain Current-Pulsed (Note 1) | -13 | A |
| Maximum Power Dissipation | 1.32 | W |
| Operating Junction and Storage Temperature Range | -55 To 150 | |
| Thermal Resistance,Junction-to-Ambient (Note 2) | 125 | /W |
2509181543_HXY-MOSFET-HXY3407AI_C3033400.pdf
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