NPN Power Transistor ISC 2SC2336 Featuring High Collector Emitter Voltage and Linear hFE for Operation
Key Attributes
Model Number:
2SC2336
Product Custom Attributes
Mfr. Part #:
2SC2336
Package:
TO-220C
Product Description
Product Overview
The ISC 2SC2336 is a Silicon NPN Power Transistor designed for audio frequency and high frequency power amplification. It features good linearity of hFE, a high collector-emitter breakdown voltage of 180V (Min), and a wide area of safe operation. This transistor is a complement to the 2SA1006 type and offers minimum lot-to-lot variations for robust device performance and reliable operation.
Product Attributes
- Brand: ISC
- Trademark: ISC & ISCsemi
- Origin: Silicon
- Type: NPN Power Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VCBO | Collector-Base Voltage | 180 | V | |||
| VCEO | Collector-Emitter Voltage | 180 | V | |||
| VEBO | Emitter-Base Voltage | 5.0 | V | |||
| IC | Collector Current-Continuous | 1.5 | A | |||
| ICM | Collector Current-Peak | 3.0 | A | |||
| PC | Collector Power Dissipation@ Ta=25 | 1.5 | W | |||
| PC | Collector Power Dissipation@TC=25 | 25 | W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature Range | -55 | 150 | |||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= 500mA; IB= 50mA | 1.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= 500mA; IB= 50mA | 1.5 | V | ||
| ICBO | Collector Cutoff Current | VCB= 150V; IE= 0 | 1.0 | A | ||
| IEBO | Emitter Cutoff Current | VEB= 3.0V; IC=0 | 1.0 | A | ||
| hFE-1 | DC Current Gain | IC= 5mA ; VCE= 5V | 30 | |||
| IC= 150mA ; VCE= 5V | 60 | 320 | ||||
| hFE-2 Classifications (R, Q, P) | 60-120 (R), 100-200 (Q), 160-320 (P) | |||||
| fT | Current-GainBandwidth Product | IC= 100mA ; VCE= 10V | 95 | MHz | ||
| COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest= 1.0MHz | 30 | pF |
Pulse Test/PW350us,duty2%
2411220255_ISC-2SC2336_C5128637.pdf
Related Products
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
