Low Gate Charge and Low RDS ON N Channel MOSFET HXY MOSFET SI1032R T1 GE3 HXY for Switching Circuits
Key Attributes
Model Number:
SI1032R-T1-GE3-HXY
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
360mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Number:
1 N-channel
Output Capacitance(Coss):
7pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
SI1032R-T1-GE3-HXY
Package:
SOT-523
Product Description
Product Overview
The SI1032R-T1-GE3 is an N-Channel Enhancement Mode MOSFET from Shenzhen HuaXuanYang Electronics CO.,LTD. It features advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: SOT-523(SC-75A)
- Marking: SI1032R-T1-GE3
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.7 | 1.0 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.5A | 0.25 | |||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =0.5A | 0.36 | |||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 0.8 | A | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 1.2 | A | |||
| Diode forward voltage | VSD | IS=0.5A, VGS =0V | 1.2 | V | ||
| Input capacitance | Ciss | VDS =16V,VGS =0V, f =1MHz | 50 | pF | ||
| Output capacitance | Coss | VDS =16V,VGS =0V, f =1MHz | 7 | pF | ||
| Reverse transfer capacitance | Crss | VDS =16V,VGS =0V, f =1MHz | 4.5 | pF | ||
| Turn-on delay time | td(on) | VGS=4.5V,VDS=10V, RL=10 | 2 | nS | ||
| Turn-on rise time | tr | VGS=4.5V,VDS=10V, RL=10 | 32 | nS | ||
| Turn-off delay time | td(off) | VGS=4.5V,VDS=10V, RL=10 | 47 | nS | ||
| Turn-off fall time | tf | VGS=4.5V,VDS=10V, RL=10 | 22 | nS |
Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | 8 | V |
| Drain Current-Continuous | ID | 0.8 | A |
| Maximum Power Dissipation | PD | 0.15 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | |
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 850 | /W |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 0.700 - 0.900 | 0.028 - 0.035 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.700 - 0.800 | 0.028 - 0.031 |
| b1 | 0.150 - 0.250 | 0.006 - 0.010 |
| b2 | 0.250 - 0.350 | 0.010 - 0.014 |
| c | 0.100 - 0.200 | 0.004 - 0.008 |
| D | 1.500 - 1.700 | 0.059 - 0.067 |
| E | 0.700 - 0.900 | 0.028 - 0.035 |
| E1 | 1.450 - 1.750 | 0.057 - 0.069 |
| e | 0.900 - 1.100 | 0.035 - 0.043 |
| L | 0.260 - 0.460 | 0.010 - 0.018 |
| REF. | 0.400 | 0.016 REF. |
| TYP. | 0.500 | 0.020 TYP. |
2509181724_HXY-MOSFET-SI1032R-T1-GE3-HXY_C22367331.pdf
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