HXY MOSFET SCT3022KLHRC11 HXY Silicon Carbide Power MOSFET for Renewable Energy and EV Applications
Key Attributes
Model Number:
SCT3022KLHRC11-HXY
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
81A
RDS(on):
26.8mΩ
Operating Temperature -:
-40℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
4.818nF
Pd - Power Dissipation:
469W
Gate Charge(Qg):
160nC
Mfr. Part #:
SCT3022KLHRC11-HXY
Package:
TO-247
Product Description
SiC Power MOSFET N-Channel Enhancement Mode
The HUAXUANYANG HXY ELECTRONICS CO.,LTD SiC Power MOSFET offers advanced 3rd generation Silicon Carbide technology for high-efficiency power conversion. It is designed to reduce switching losses, minimize gate ringing, and improve system efficiency, leading to reduced cooling requirements and increased power density. This MOSFET is ideal for high-speed switching applications and is suitable for demanding environments.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Material: SiC (Silicon Carbide)
- Certifications: Halogen free, RoHS compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | ID (A) | RDS(on) (m) | VGSmax (V) | TJ (C) | Applications |
| SCT3022KLHRC11 | TO-247 | 1200 | 81 (TC=25C) | 14.7 - 28.8 (VGS=15V, ID=50A) | -8/+19 (dynamic) | -40 to +175 | Renewable energy, EV battery chargers, High voltage DC/DC converters, Switch Mode Power Supplies |
2512231155_HXY-MOSFET-SCT3022KLHRC11-HXY_C49420503.pdf
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