Powerful HXY MOSFET AFGHL75T65SQ-HXY IGBT with 650V Collector Emitter Voltage and 90A Collector Current
Key Attributes
Model Number:
AFGHL75T65SQ-HXY
Product Custom Attributes
Pd - Power Dissipation:
330W
Td(off):
130ns
Td(on):
20ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
23pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
104nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
95ns
Switching Energy(Eoff):
920uJ
Turn-On Energy (Eon):
2.04mJ
Input Capacitance(Cies):
2.81nF
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
215pF
Mfr. Part #:
AFGHL75T65SQ-HXY
Package:
TO-247
Product Description
Product Overview
The AFGHL75T65SQ is an Insulated Gate Bipolar Transistor (IGBT) offering high performance and reliability. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is designed for applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.
Product Attributes
- Brand: HUAXUANYANG
- Model: AFGHL75T65SQ
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Website: www.hxymos.com
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | @ TVJ = 25C | 650 | V | ||
| IC | DC collector current | TC = 25C | 90 | A | ||
| IC | DC collector current | TC = 100C | 75 | A | ||
| ICM | Pulsed collector current | TC = 25C | 300 | A | ||
| IF | Maximum Diode forward current | TC = 25C | 90 | A | ||
| IF | Maximum Diode forward current | TC = 100C | 75 | A | ||
| IFM | Diode pulsed current | TC = 25C | 300 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 330 | W | ||
| Ptot | Power Dissipation | TC = 100C | 160 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.45 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.54 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 125C | 1.86 | V | ||
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 75A ,TVJ = 175C | 2.0 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC =75A | 1.85 | 2.1 | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 125C | 1.55 | V | ||
| VF | Diode forward voltage | VGE = 0V , IC = 75A ,TVJ = 175C | 1.4 | V | ||
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | 75 | mA | ||
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | 100 | nA | ||
| gfs | Transconductance | VGE = 20V, IC = 75A | 86 | S | ||
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 2810 | pF | ||
| Coes | Output Capacitance | 215 | pF | |||
| Cres | Reverse Transfer Capacitance | 23 | pF | |||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 75A | 104 | nC | ||
| Qge | Gate to Emitter charge | 15 | nC | |||
| Qgc | Gate to Collector charge | 30 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VGE = 15V, VCC = 400V IC= 75A, RG(off) = 8 | 20 | ns | ||
| tr | Turn-On Rise Time | 30 | ns | |||
| td(off) | Turn-Off Delay Time | 130 | ns | |||
| tf | Turn-Off Fall Time | 32 | ns | |||
| Eon | Turn-on energy | 2.04 | mJ | |||
| Eoff | Turn-off energy | 0.92 | mJ | |||
| Ets | Total switching energy | 2.96 | mJ | |||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 75 A, di/dt = 800 A/S | 95 | ns | ||
| Qrr | Reverse recovery charge | 1.87 | mC | |||
| Irrm | Peak reverse recovery current | 8.0 | A | |||
2509181739_HXY-MOSFET-AFGHL75T65SQ-HXY_C49003475.pdf
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