Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device
Key Attributes
Model Number:
IXXX160N65B4-HXY
Product Custom Attributes
Td(off):
379ns
Pd - Power Dissipation:
1kW
Td(on):
94ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
70pF
Input Capacitance(Cies):
10.203nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.2V@0.25mA
Gate Charge(Qg):
330nC@15V
Pulsed Current- Forward(Ifm):
560A
Output Capacitance(Coes):
480pF
Reverse Recovery Time(trr):
190ns
Switching Energy(Eoff):
9.81mJ
Turn-On Energy (Eon):
6.37mJ
Mfr. Part #:
IXXX160N65B4-HXY
Package:
TO-247P
Product Description
Product Overview
The IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding power electronics applications.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Certifications: RoHS compliant, Halogen-free
- Package: TO-247P
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current(1) | TC = 25C | 240 | A | ||
| IC | DC collector current(1) | TC = 100C | 160 | A | ||
| ICM | Pulsed collector current | TC = 25C | 560 | A | ||
| IF | Maximum Diode forward current(1) | TC = 25C | 240 | A | ||
| IF | Maximum Diode forward current(1) | TC = 100C | 160 | A | ||
| IFM | Diode pulsed current | TC = 25C | 560 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | (tp 10s, D < 0.010) TVJ = 25C | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 1000 | W | ||
| Ptot | Power Dissipation | TC = 100C | 500 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance junction - ambient | 40 | C/W | |||
| RJC | IGBT Thermal resistance: junction - case | IGBT | 0.12 | C/W | ||
| RJC | Diode Thermal resistance: junction - case | Diode | 0.16 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A | 1.37 | 1.6 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A ,TVJ = 125C | 1.63 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 160A ,TVJ = 175C | 2.0 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A | 1.33 | 1.6 | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A ,TVJ = 125C | 1.37 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 160A ,TVJ = 175C | 1.4 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC =0.25mA | 4.2 | 5.2 | 6.2 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 160.0 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE = 20V , IC = 160A | 160 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 10203 | - | pF | |
| Coes | Output Capacitance | 480 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 70 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE =520V, IC = 160A | 330 | - | nC | |
| Qge | Gate to Emitter charge | 51 | - | nC | ||
| Qgc | Gate to Collector charge | 72 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VCC = 400 V, IC =160 A VGE = 15 V RG(on) = 10, RG(off) = 10 | 94 | - | ns | |
| tr | Turn-On Rise Time | 136 | - | ns | ||
| td(off) | Turn-Off DelayTime | 379 | - | ns | ||
| tf | Turn-Off Fall Time | 214 | - | ns | ||
| Eon | Turn-on energy | 6.37 | - | mJ | ||
| Eoff | Turn-off energy | 9.81 | - | mJ | ||
| Ets | Total switching energy | 16.18 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | TVJ = 25 C VCC = 550 V, IC =160 A VGE = 0 / 15 V RG(on) = 10 , RG(off) = 10 | 190 | - | ns | |
| Qrr | Reverse recovery charge | 3.09 | - | mC | ||
| Irrm | Peak reverse recovery current | 29 | - | A | ||
Applications
- UPS
- EV-Charger
- String solar Inverter
- Energy Storage Inverter
2509181739_HXY-MOSFET-IXXX160N65B4-HXY_C49003479.pdf
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