HXY MOSFET IRF100S201 HXY N Channel SGT MOSFET with Low Gate Charge and Robust Avalanche Performance
Key Attributes
Model Number:
IRF100S201-HXY
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Pd - Power Dissipation:
379W
Input Capacitance(Ciss):
9.03nF
Output Capacitance(Coss):
1.505nF
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
IRF100S201-HXY
Package:
TO-263
Product Description
Product Overview
The IRF100S201 is an N-Channel SGT Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. It utilizes advanced SGT MOSFET technology to achieve low RDS(ON), low gate charge, fast switching speeds, and excellent avalanche characteristics. This device is designed for enhanced ruggedness and suitability in various applications including consumer electronic power supplies, motor control, and synchronous-rectification.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Model: IRF100S201
- Origin: Shenzhen, China
- Technology: SGT MOSFET
- Package: TO-263
- Mode: N-Channel Enhancement Mode
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 260 | A | ||
| Continuous Drain Current | ID | TC=100C | 163 | A | ||
| Pulsed Drain Current | IDM | 1028 | A | |||
| Single Pulse Avalanche Energy | EAS | 583 | mJ | |||
| Total Power Dissipation | PD | TC=25C | 379 | W | ||
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | 150 | C | ||
| Thermal Resistance Junction-to-Ambient | RJA | 59 | C/W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.33 | C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V | ||
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = 20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=25C, VDS =100V, VGS = 0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | TJ=100C, VDS =100V, VGS = 0V | 100 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=20A | 4.2 | m | ||
| Forward Transconductance | gfs | VDS=10V, ID=20A | 76 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 50V, VGS =0V, f =1MHz | 9030 | pF | ||
| Output Capacitance | Coss | VDS = 50V, VGS =0V, f =1MHz | 1505 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 50V, VGS =0V, f =1MHz | 40 | pF | ||
| Gate Resistance | Rg | f =1MHz | 2.3 | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = 10V, VDS = 50V, ID=20A | 150 | nC | ||
| Gate-Source Charge | Qgs | VGS = 10V, VDS = 50V, ID=20A | 32.5 | |||
| Gate-Drain Charge | Qg d | VGS = 10V, VDS = 50V, ID=20A | 49 | |||
| Turn-on Delay Time | td(on) | VGS =10V, VDD =50V, RG = 3, ID= 20A | 27 | ns | ||
| Rise Time | tr | VGS =10V, VDD =50V, RG = 3, ID= 20A | 78.5 | ns | ||
| Turn-off Delay Time | td(off) | VGS =10V, VDD =50V, RG = 3, ID= 20A | 110 | ns | ||
| Fall Time | tf | VGS =10V, VDD =50V, RG = 3, ID= 20A | 86 | ns | ||
| Body Diode Characteristics | ||||||
| Body Diode Reverse Recovery Time | trr | IF = 20A, dI/dt=100A/s | 88 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, dI/dt=100A/s | 220 | nC | ||
| Diode Forward Voltage | VSD | ID = 20A, VGS = 0V | 1.2 | V | ||
| Continuous Source Current | IS | TC=25C | 260 | A | ||
Notes:
1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C.
2. The EAS data shows Max. rating. The test condition is VDD=50V, VGS=10V, L=0.4mH, IAS=54A.
3. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design.
4. The data tested by pulsed, pulse width 300s, duty cycle 2%.
5. This value is guaranteed by design hence it is not included in the production test.
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 4.470 4.670 | 0.176 0.184 |
| A1 | 0.000 0.150 | 0.000 0.006 |
| B | 1.120 1.420 | 0.044 0.056 |
| b | 0.710 0.910 | 0.028 0.036 |
| b1 | 1.170 1.370 | 0.046 0.054 |
| c | 0.310 0.530 | 0.012 0.021 |
| c1 | 1.170 1.370 | 0.046 0.054 |
| D | 10.010 10.310 | 0.394 0.406 |
| E | 8.500 8.900 | 0.335 0.350 |
| e | ||
| e1 | 4.980 5.180 | 0.196 0.204 |
| L | 14.940 15.500 | 0.588 0.610 |
| L1 | 4.950 5.450 | 0.195 0.215 |
| L2 | 2.340 2.740 | 0.092 0.108 |
| L3 | 1.300 1.700 | 0.051 0.067 |
| 0 8 | 0 8 | |
| V | 5.600 REF. | 0.220REF. |
| 2.540 TYP. | 0.100 TYP. |
2512231155_HXY-MOSFET-IRF100S201-HXY_C22367077.pdf
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