650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free
Key Attributes
Model Number:
IXYH75N65C3D1-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
IXYH75N65C3D1-HXY
Package:
TO-247
Product Description
Product Overview
The IXYH75N65C3D1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IXYH75N65C3D1
- Origin: Shenzhen, China
- Package Type: TO-247
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC @TC=25C | 100 | A | Collector Current |
| IC @TC=100C | 60 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current |
| IF @TC=25C | 100 | A | Diode Continuous Forward Current |
| IF @TC=100C | 60 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 8 | s | Short circuit withstand time |
| PD @TC=25C | 250 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.60 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.55 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) Typ @IC=60A, VGE=15V, TJ=25 | 1.65 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) Typ @VCE=VGE,IC=1mA | 5.3 | V | Gate Threshold Voltage |
| VF Typ @IF=50A, TJ=25 | 1.65 | V | Diode Forward Voltage |
| ICES @VCE=650V, VGE=0V | -- | A | Collector-Emitter Leakage Current |
| IGES(F) @VGE=+20V | -- | nA | Gate-Emitter Forward Leakage Current |
| IGES(R) @VGE=-20V | -- | nA | Gate-Emitter Reverse Leakage Current |
| Cies Typ @VGE=0V, VCE=25V, f=1.0MHz | 3356 | pF | Input Capacitance |
| Coes Typ | 179 | pF | Output Capacitance |
| Cres Typ | 93 | pF | Reverse Transfer Capacitance |
| Qg Typ @VCC=520V, ICE=60A, VGE=15V | 183 | nC | Gate charge |
| Qge Typ | 26 | nC | Gate-emitter charge |
| Qgc Typ | 83 | nC | Gate-collector charge |
| td(on) Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 24 | ns | Turn-on Delay Time |
| tr Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 88 | ns | Rise Time |
| td(off) Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 124 | ns | Turn-Off Delay Time |
| tf Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 73 | ns | Fall Time |
| Eon Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.40 | mJ | Turn-On Switching Loss |
| Eoff Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.20 | mJ | Turn-Off Switching Loss |
| Ets Typ @IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 2.60 | mJ | Total Switching Loss |
| Trr Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 136 | ns | Reverse Recovery Time |
| Qrr Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 350 | nC | Reverse Recovery Charge |
| Irrm Typ @IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 6.9 | A | Reverse Recovery Current |
Applications
UPS, Motor drives, Boost, Portable power stations.
2509181738_HXY-MOSFET-IXYH75N65C3D1-HXY_C49003430.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
