1200V 50A IGBT Device HXY MOSFET APT50GT120B2RG-HXY Suitable for UPS EV Chargers and Solar String Inverters
Key Attributes
Model Number:
APT50GT120B2RG-HXY
Product Custom Attributes
Td(off):
216ns
Pd - Power Dissipation:
600W
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
42pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Gate Charge(Qg):
200nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
380ns
Switching Energy(Eoff):
1.8mJ
Turn-On Energy (Eon):
2.65mJ
Input Capacitance(Cies):
6.42nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
195pF
Mfr. Part #:
APT50GT120B2RG-HXY
Package:
TO-247P
Product Description
Product Overview
The APT50GT120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: APT50GT120B2RG
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: TO-247P
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VCE(SAT) | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A | - | 1.9 | 2.3 | V |
| VCE(SAT) | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 50A ,TVJ = 175C | - | 2.8 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A | - | 2.7 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 50A ,TVJ = 175C | - | 2.4 | - | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 5.1 | 5.8 | 6.5 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | - | 350.0 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | - | 6420 | - | pF |
| Coes | Output Capacitance | - | - | 195 | - | pF |
| Cres | Reverse Transfer Capacitance | - | - | 42 | - | pF |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 50A | - | 200 | - | nC |
| Qge | Gate to Emitter charge | - | - | 46 | - | nC |
| Qgc | Gate to Collector charge | - | - | 75 | - | nC |
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 600V IC= 50A, RG(off) = 10 | - | 55 | - | ns |
| tr | Turn-On Rise Time | - | - | 32 | - | ns |
| td(off) | Turn-Off DelayTime | - | - | 216 | - | ns |
| tf | Turn-Off Fall Time | - | - | 38 | - | ns |
| Eon | Turn-on energy | - | - | 2.65 | - | mJ |
| Eoff | Turn-off energy | - | - | 1.8 | - | mJ |
| Ets | Total switching energy | - | - | 4.45 | - | mJ |
| Trr | Reverse recovery time | VR = 600 V, IF = 50 A, di/dt = 600 A/S | - | 380 | - | ns |
| Qrr | Reverse recovery charge | - | - | 2.31 | - | mC |
| Irrm | Peak reverse recovery current | - | - | 15.5 | - | A |
| RJC | IGBT Thermal resistance: junction - case | IGBT | - | 0.25 | - | C/W |
| RJC | Diode Thermal resistance: junction - case | Diode | - | 0.49 | - | C/W |
2509181739_HXY-MOSFET-APT50GT120B2RG-HXY_C49003482.pdf
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