High collector current HXY MOSFET IGW100N60H3-HXY with low EMI and low saturation voltage features
Key Attributes
Model Number:
IGW100N60H3-HXY
Product Custom Attributes
Td(off):
195ns
Pd - Power Dissipation:
429W
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
26pF
Input Capacitance(Cies):
3.452nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.88mA
Gate Charge(Qg):
156nC
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
223pF
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
1.65mJ
Turn-On Energy (Eon):
3.3mJ
Mfr. Part #:
IGW100N60H3-HXY
Package:
TO-247
Product Description
Product Overview
The IGW100N60H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, low switching losses, and robust transient reliability, making it suitable for demanding industrial uses. Its low EMI characteristics also contribute to its suitability in sensitive electronic systems.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| Key Performance and Package Parameters | ||||||
| Tvjmax | Maximum Rating | 175 | C | |||
| VC | Collector emitter voltage | TVJ = 25C | 650 | V | ||
| IC | DC collector current, limited by Tvjmax | TC = 25C | 150 | A | ||
| IC | DC collector current, limited by Tvjmax | TC = 100C | 100 | A | ||
| ICpul | Pulsed collector current, limited by Tvjmax | 300 | A | |||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 25C | 150 | A | ||
| IF | Maximum Diode forward current, limited by Tvjmax | TC = 100C | 100 | A | ||
| IFpul | Diode pulsed current, limited by Tvjmax | 300 | A | |||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| Pto | Power Dissipation | TC = 25C | 429 | W | ||
| Pto | Power Dissipation | TC = 100C | 214 | W | ||
| Tvj | Operating Junction Temperature Range | -55 | +175 | C | ||
| TST | Storage Temperature Range | -55 | +175 | C | ||
| TvjO | Temperature under switching conditions | -40 | +150 | C | ||
| Features | ||||||
| 650V, 100A IGBT | ||||||
| High Input Impedance | ||||||
| Low Saturation Voltage VCE(SAT) | ||||||
| Low Switching Losses | ||||||
| Low Conduction for a High Efficiency | ||||||
| Rugged Transient Reliability | ||||||
| Low EMI | ||||||
| Application | ||||||
| Industrial UPS | ||||||
| EV-Charging | ||||||
| String inverter | ||||||
| Welding | ||||||
| Static Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 1mA , TVJ = 25C | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 25C | - | 1.45 | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 100A ,TVJ = 175C | - | 1.75 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 25C | - | 1.55 | - | V |
| VF | Diode forward voltage | VGE = 0V , IC = 100A ,TVJ = 175C | - | 1.6 | - | V |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 0.88mATVJ = 25C | - | 4 | - | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0VTVJ = 25C | - | - | 100 | mA |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| IGES | Gate-Emitter leakage current | VGE = -20V, VCE = 0V | -100 | - | - | nA |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 100K Hz | - | 3452 | - | pF |
| Coes | Output Capacitance | - | 223 | - | pF | |
| Cres | Reverse Transfer Capacitance | - | 26 | - | pF | |
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 100A | - | 156 | - | nC |
| Switching Characteristics (Tvj = 25 C) | ||||||
| td(on) | Turn-On Delay Time | Tvj = 25 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| tr | Turn-On Rise Time | - | 58 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 195 | - | ns | |
| tf | Turn-Off Fall Time | - | 66 | - | ns | |
| Eon | Turn-on energy | - | 3.3 | - | mJ | |
| Eoff | Turn-off energy | - | 1.65 | - | mJ | |
| Ets | Total switching energy | - | 4.35 | - | mJ | |
| Switching Characteristics (Tvj = 175 C) | ||||||
| td(on) | Turn-On Delay Time | Tvj = 175 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| tr | Turn-On Rise Time | - | 50 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 215 | - | ns | |
| tf | Turn-Off Fall Time | - | 58 | - | ns | |
| Eon | Turn-on energy | - | 3.77 | - | mJ | |
| Eoff | Turn-off energy | - | 2.07 | - | mJ | |
| Ets | Total switching energy | - | 5.84 | - | mJ | |
| Diode Recovery Characteristics (Tvj = 25 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A VGE = 0 / 15 V RG(on) = 10 , RG(off) = 10 | - | 123 | - | ns |
| Qrr | Reverse recovery charge | - | 1.95 | - | mC | |
| Irrm | Peak reverse recovery current | - | 30.8 | - | A | |
| Erec | Reverse recovery energy | - | 0.47 | - | mJ | |
| Diode Recovery Characteristics (Tvj = 175 C) | ||||||
| Trr | Reverse recovery time | VCE = 400 V, IC = 100 A VGE = 0 / 15 V RG(on) = 10 , RG(off) = 10 | - | 150 | - | ns |
| Qrr | Reverse recovery charge | - | 3.85 | - | mC | |
| Irrm | Peak reverse recovery current | - | 44.1 | - | A | |
| Erec | Reverse recovery energy | - | 0.98 | - | mJ | |
| Thermal Resistance | ||||||
| RthJC | IGBT Thermal resistance: junction - case | - | 0.25 | 0.35 | C/W | |
| RthJC | Diode Thermal resistance: junction - case | - | 0.28 | 0.38 | C/W | |
2509181738_HXY-MOSFET-IGW100N60H3-HXY_C49003438.pdf
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