HXY MOSFET APT68GA60B-HXY Featuring TO-247 Package and High Collector Current for Power Applications
Key Attributes
Model Number:
APT68GA60B-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
136ns
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@250uA
Gate Charge(Qg):
57nC@15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
56ns
Switching Energy(Eoff):
430uJ
Turn-On Energy (Eon):
900uJ
Input Capacitance(Cies):
1.52nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
110pF
Mfr. Part #:
APT68GA60B-HXY
Package:
TO-247
Product Description
Product Overview
The APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: APT68GA60B
- Package: TO-247
- Packing: 30PCS
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VCE | Collector emitter voltage | 650 | V | |||
| IC | DC collector current | TC = 25C | 70 | A | ||
| IC | DC collector current | TC = 100C | 40 | A | ||
| ICM | Pulsed collector current | TC = 25C | 160 | A | ||
| IF | Maximum Diode forward current | TC = 25C | 70 | A | ||
| IF | Maximum Diode forward current | TC = 100C | 40 | A | ||
| IFM | Diode pulsed current | TC = 25C | 160 | A | ||
| VGE | Gate-Emitter voltage | TVJ = 25C | 20 | V | ||
| VGE | Transient Gate-Emitter Voltage | TVJ = 25C (tp 10s, D < 0.010) | 30 | V | ||
| Ptot | Power Dissipation | TC = 25C | 250 | W | ||
| Ptot | Power Dissipation | TC = 100C | 125 | W | ||
| TVJ | Operating Junction Temperature Range | -40 | +175 | C | ||
| TSTG | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| RJA | Thermal resistance: junction - ambient | 40 | C/W | |||
| RJC | Thermal resistance: junction - case IGBT | 0.6 | C/W | |||
| RJC | Thermal resistance: junction - case Diode | 0.65 | C/W | |||
| Electrical Characteristics | ||||||
| V(BR)CES | Collector - Emitter Breakdown Voltage | VGE = 0V , IC = 0.5mA | 650 | - | - | V |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A | 1.6 | 2.1 | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 125C | 1.85 | - | V | |
| VCESAT | Collector - Emitter Saturation Voltage | VGE = 15V , IC = 40A ,TVJ = 175C | 1.95 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A | 1.8 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC =40A ,TVJ = 125C | 1.5 | - | V | |
| VF | Diode forward voltage | VGE = 0V , IC = 40A ,TVJ = 175C | 1.35 | - | V | |
| VGE(th) | Gate-Emitter threshold voltage | VGE = VCE, IC = 250mA | 3.2 | 4 | 4.8 | V |
| ICES | Zero Gate voltage Collector current | VCE = 650V , VGE = 0V | - | 40 | mA | |
| IGES | Gate-Emitter leakage current | VGE = 20V , VCE = 0V | - | 100 | nA | |
| gfs | Transconductance | VGE =15V, IC = 40A | 55 | - | S | |
| Dynamic Characteristics | ||||||
| Cies | Input Capacitance | VGE = 0V, VCE = 25V, f = 1MHz | 1520 | - | pF | |
| Coes | Output Capacitance | 110 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 11 | - | pF | ||
| Qg | Gate Charge | VGE = 0 to 15V VCE = 520V, IC = 40A | 57 | - | nC | |
| Qge | Gate to Emitter charge | 6.5 | - | nC | ||
| Qgc | Gate to Collector charge | 17.5 | - | nC | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On DelayTime | VGE = 15V, VCC = 400V IC= 40A, RG(on) =15,RG(off) =15 | 26 | - | ns | |
| tr | Turn-On Rise Time | 28 | - | ns | ||
| td(off) | Turn-Off DelayTime | 136 | - | ns | ||
| tf | Turn-Off Fall Time | 34 | - | ns | ||
| Eon | Turn-on energy | 0.9 | - | mJ | ||
| Eoff | Turn-off energy | 0.43 | - | mJ | ||
| Ets | Total switching energy | 1.33 | - | mJ | ||
| Diode Recovery Characteristics | ||||||
| Trr | Reverse recovery time | VR = 400 V, IF = 40 A, di/dt = 400 A/S | 56 | - | ns | |
| Qrr | Reverse recovery charge | 0.27 | - | mC | ||
| Irrm | Peak reverse recovery current | 8.0 | - | A | ||
2509181738_HXY-MOSFET-APT68GA60B-HXY_C49003455.pdf
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