IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand
Key Attributes
Model Number:
JNG75T120QCS2
Product Custom Attributes
Td(off):
762ns
Pd - Power Dissipation:
694W
Td(on):
188ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
17pF
Input Capacitance(Cies):
9.86nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
281pF
Reverse Recovery Time(trr):
580ns
Switching Energy(Eoff):
6.8mJ
Turn-On Energy (Eon):
11.7mJ
Mfr. Part #:
JNG75T120QCS2
Package:
TO-247-3LPlus
Product Description
Product Overview
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
Product Attributes
- Brand: JIAEN
- Origin: www.jiaensemi.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VCES | Collector-Emitter Voltage | 1200 | V | ||
| VGES | Gate-Emitter Voltage | + 30 | V | |||
| IC | Continuous Collector Current ( TC=25 ) | 150 | A | |||
| IC | Continuous Collector Current ( TC=100) | 75 | A | |||
| ICM | Pulsed Collector Current (Note 1) | 225 | A | |||
| IF | Diode Continuous Forward Current ( TC=100 ) | 75 | A | |||
| IFM | Diode Maximum Forward Current (Note 1) | 225 | A | |||
| tsc | Short Circuit Withstand Time | 10 | us | |||
| PD | Maximum Power Dissipation ( TC=25 ) | 694 | W | |||
| PD | Maximum Power Dissipation ( TC=100) | 278 | W | |||
| Thermal Characteristics | Rth j-c | Thermal Resistance, Junction to case for IGBT | 0.18 | / W | ||
| Rth j-c | Thermal Resistance, Junction to case for Diode | 0.5 | / W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 40 | / W | |||
| TJ | Operating Junction Temperature Range | -55 | +150 | |||
| TSTG | Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TC=25 unless otherwise noted ) | BVCES | Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA | 1200 | - | - | V |
| ICES | Collector-Emitter Leakage Current VCE= 1200V, VGE= 0V | - | 100 | uA | ||
| IGES | Gate Leakage Current, Forward VGE= + 30V, VCE= 0V | - | + 100 | nA | ||
| VGE(th) | Gate Threshold Voltage VGE= VCE, IC= 250uA | 4.0 | - | 7.0 | V | |
| VCE(sat) | Collector-Emitter Saturation Voltage VGE=15V, IC= 75A | 1.65 | 2.3 | V | ||
| Qg | Total Gate Charge VCC=960V VGE=15V IC=75A | 472 | nC | |||
| Qge | Gate-Emitter Charge | 118 | nC | |||
| Qgc | Gate-Collector Charge | 251 | nC | |||
| td(on) | Turn-on Delay Time VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25 | 188 | - | ns | ||
| tr | Turn-on Rise Time | 115 | - | ns | ||
| td(off) | Turn-off Delay Time | 762 | - | ns | ||
| tf | Turn-off Fall Time | 137 | - | ns | ||
| Eon | Turn-on Switching Loss | 11.7 | - | mJ | ||
| Eoff | Turn-off Switching Loss | 6.8 | - | mJ | ||
| Ets | Total Switching Loss | 18.5 | - | mJ | ||
| Cies | Input Capacitance VCE=25V VGE=0V f = 1MHz | 9860 | - | pF | ||
| Coes | Output Capacitance | 281 | - | pF | ||
| Cres | Reverse Transfer Capacitance | 17 | - | pF | ||
| Electrical Characteristics of Diode (TC=25 unless otherwise noted ) | VF | Diode Forward Voltage IF=75A | 1.85 | 3.0 | V | |
| trr | Diode Reverse Recovery Time VCE = 600V IF= 75A dIF/dt = 700A/us | 580 | ns | |||
| IRR | Diode peak Reverse Recovery Current | 31.3 | A | |||
| Qr r | Diode Reverse Recovery Charge | 1250 | nC |
2509021810_JIAENSEMI-JNG75T120QCS2_C51484278.pdf
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