power switching device JIAENSEMI JNG40T120HS IGBT with square RBSOA and soft current turn off waveform
Key Attributes
Model Number:
JNG40T120HS
Product Custom Attributes
Pd - Power Dissipation:
300W
Td(off):
158ns
Td(on):
87ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
30pF
Input Capacitance(Cies):
3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Pulsed Current- Forward(Ifm):
90A
Output Capacitance(Coes):
80pF
Reverse Recovery Time(trr):
326ns
Switching Energy(Eoff):
2.1mJ
Turn-On Energy (Eon):
6.1mJ
Mfr. Part #:
JNG40T120HS
Package:
TO-247
Product Description
JNG40T120HS IGBT
JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.
Product Attributes
- Brand: JIAEN
- Model: JNG40T120HS
- Package: TO247
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage (VCES) | 1200 | V | |||
| Gate-Emitter Voltage (VGES) | ±30 | V | |||
| Continuous Collector Current (IC) | (TC=25 ) | 80 | A | ||
| Continuous Collector Current (IC) | (TC=100) | 40 | A | ||
| Pulsed Collector Current (ICM) | (Note 1) | 90 | A | ||
| Diode Continuous Forward Current (IF) | (TC=100 ) | 40 | A | ||
| Diode Maximum Forward Current (IFM) | (Note 1) | 90 | A | ||
| Short Circuit Withstand Time (tsc) | 10 | us | |||
| Maximum Power Dissipation (PD) | (TC=25 ) | 300 | W | ||
| Maximum Power Dissipation (PD) | (TC=100) | 110 | W | ||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to case for IGBT (Rth j-c) | 0.42 | / W | |||
| Thermal Resistance, Junction to case for Diode (Rth j-c) | 0.8 | / W | |||
| Thermal Resistance, Junction to Ambient (Rth j-a) | 40 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| Collector-Emitter Breakdown Voltage (BVCES) | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current (ICES) | VCE= 1200V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward (IGES) | VGE=30V, VCE= 0V | - | - | 100 | nA |
| Gate Leakage Current, Reverse (IGES) | VGE= -30V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage (VGE(th)) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VGE=15V, IC= 40A | - | 2.1 | - | V |
| Total Gate Charge (Qg) | VCC=600V VGE=15V IC=40A | - | 107 | - | nC |
| Gate-Emitter Charge (Qge) | - | 36 | - | nC | |
| Gate-Collector Charge (Qgc) | - | 58 | - | nC | |
| Turn-on Delay Time (td(on)) | VCC=600V VGE=15V IC=40A RG=15Ω Inductive Load TC=25 °C | - | 87 | - | ns |
| Turn-on Rise Time (tr) | - | 231 | - | ns | |
| Turn-off Delay Time (td(off)) | - | 158 | - | ns | |
| Turn-off Fall Time (tf) | - | 139 | - | ns | |
| Turn-on Switching Loss (Eon) | - | 6.1 | - | mJ | |
| Turn-off Switching Loss (Eoff) | - | 2.1 | - | mJ | |
| Total Switching Loss (Ets) | - | 8.2 | - | mJ | |
| Input Capacitance (Cies) | VCE=25V VGE=0V f = 1MHz | - | 3000 | - | pF |
| Output Capacitance (Coes) | - | 80 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 30 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | |||||
| Diode Forward Voltage (VF) | IF=40A | - | 1.7 | 2.7 | V |
| Diode Reverse Recovery Time (trr) | VCE = 600V IF= 40A dIF/dt = 250A/us | - | 326 | - | ns |
| Diode peak Reverse Recovery Current (IRR) | - | 15.6 | - | A | |
| Diode Reverse Recovery Charge (QRR) | - | 2843 | - | nC | |
2509021810_JIAENSEMI-JNG40T120HS_C51484270.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
