Power transistor HXY MOSFET IKW50N60H3-HXY designed for enhanced switching efficiency and durability
Key Attributes
Model Number:
IKW50N60H3-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
IKW50N60H3-HXY
Package:
TO-247
Product Description
Product Overview
The IKW50N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy capability. It is designed for applications such as UPS, motor drives, and boost converters, offering reliability and ruggedness.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IKW50N60H3
- Package Type: TO-247
- Certifications: Halogen Free and Green Devices Available (RoHS Compliant)
- Website: www.hxymos.com
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 100 | A | Collector Current |
| IC (@TC=100C) | 50 | A | Collector Current |
| ICM | 200 | A | Pulsed Collector Current, tp limited by TJmax |
| IF (@TC=25C) | 100 | A | Diode Continuous Forward Current |
| IF (@TC=100C) | 50 | A | Diode Continuous Forward Current |
| IFM | 200 | A | Diode Maximum Forward Current, limited by TJmax |
| VGES | 30 | V | Gate-Emitter Voltage |
| tSC | 4 | s | Short circuit withstand time (VGE=15V, VCC400V) |
| PD (@TC=25C) | 300 | W | Power Dissipation |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.50 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.65 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat).typ (@TJ=25C) | 1.65 | V | Collector-Emitter Saturation Voltage (Typ.) |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage (Min. - Max.) |
| VF (@IF=50A, TJ=25C) | 1.45 | V | Diode Forward Voltage (Typ.) |
| ICES (@VCE=650V, VGE=0V) | 10 | A | Collector-Emitter Leakage Current (Max.) |
| IGES(F) (@VGE=+20V) | 100 | nA | Gate-Emitter Forward Leakage Current (Max.) |
| IGES(R) (@VGE=-20V) | -100 | nA | Gate-Emitter Reverse Leakage Current (Max.) |
| Cies (@VCE=25V, f=1.0MHz) | 3363 | pF | Input Capacitance (Typ.) |
| Coes (@VCE=25V, f=1.0MHz) | 206 | pF | Output Capacitance (Typ.) |
| Cres (@VCE=25V, f=1.0MHz) | 92 | pF | Reverse Transfer Capacitance (Typ.) |
| Qg (@VCC=520V, ICE=50A, VGE=15V) | 179 | nC | Gate charge (Typ.) |
| Qge (@VCC=520V, ICE=50A, VGE=15V) | 31 | nC | Gate-emitter charge (Typ.) |
| Qgc (@VCC=520V, ICE=50A, VGE=15V) | 87 | nC | Gate-collector charge (Typ.) |
| IC(SC) (@VGE=15V, VCC400V, tSC4s,TJ175C) | 469 | A | Short circuit collector current (Max.) |
| td(on) (@TJ=25C) | 24 | ns | Turn-on Delay Time (Typ.) |
| tr (@TJ=25C) | 86 | ns | Rise Time (Typ.) |
| td(off) (@TJ=25C) | 122 | ns | Turn-Off Delay Time (Typ.) |
| tf (@TJ=25C) | 74 | ns | Fall Time (Typ.) |
| Eon (@TJ=25C) | 1.38 | mJ | Turn-On Switching Loss (Typ.) |
| Eoff (@TJ=25C) | 1.14 | mJ | Turn-Off Switching Loss (Typ.) |
| Ets (@TJ=25C) | 2.52 | mJ | Total Switching Loss (Typ.) |
| td(on) (@TJ=175C) | 33 | ns | Turn-on Delay Time (Typ.) |
| tr (@TJ=175C) | 97 | ns | Rise Time (Typ.) |
| td(off) (@TJ=175C) | 146 | ns | Turn-Off Delay Time (Typ.) |
| tf (@TJ=175C) | 84 | ns | Fall Time (Typ.) |
| Eon (@TJ=175C) | 1.65 | mJ | Turn-On Switching Loss (Typ.) |
| Eoff (@TJ=175C) | 1.32 | mJ | Turn-Off Switching Loss (Typ.) |
| Ets (@TJ=175C) | 2.97 | mJ | Total Switching Loss (Typ.) |
| Trr (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s) | 98 | ns | Reverse Recovery Time (Typ.) |
| Qrr (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s) | 1580 | C | Reverse Recovery Charge (Typ.) |
| Irrm (@TJ=25C, IF=50A, VCC=400V, di/dt=200A/s) | 26 | A | Reverse Recovery Current (Typ.) |
| Trr (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s) | 104 | ns | Reverse Recovery Time (Typ.) |
| Qrr (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s) | 1640 | C | Reverse Recovery Charge (Typ.) |
| Irrm (@TJ=175C, IF=50A, VCC=400V, di/dt=200A/s) | 27 | A | Reverse Recovery Current (Typ.) |
2509181738_HXY-MOSFET-IKW50N60H3-HXY_C49003408.pdf
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