Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design
Key Attributes
Model Number:
IKW60N60H3-HXY
Product Custom Attributes
Pd - Power Dissipation:
250W
Td(off):
124ns
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
183nC@15V
Reverse Recovery Time(trr):
136ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
1.4mJ
Input Capacitance(Cies):
3.356nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
179pF
Mfr. Part #:
IKW60N60H3-HXY
Package:
TO-247
Product Description
Product Overview
The IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power handling and fast switching capabilities.
Product Attributes
- Brand: HUAXUANYANG
- Manufacturer: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: IKW60N60H3
- Technology: Trench and Field Stop (T-FS)
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Package Type: TO-247
- Unit Quantity: 30 (Tube)
- Website: www.hxymos.com
Technical Specifications
| Parameter | Test Conditions | Value | Unit | Min. | Typ. | Max. | |
| VCES | Collector-Emitter Voltage | 650 | V | ||||
| Collector-Emitter Breakdown Voltage | VGE =0V, IC=1mA | 650 | V | ||||
| IC | Collector Current @TC=25C | 100 | A | ||||
| Collector Current @TC=100C | 60 | A | |||||
| ICM | Pulsed Collector Current, tp limited by TJmax | 200 | A | ||||
| IF | Diode Continuous Forward Current @TC=25C | 100 | A | ||||
| Diode Continuous Forward Current @TC=100C | 60 | A | |||||
| IFM | Diode Maximum Forward Current, limited by TJmax | 200 | A | ||||
| VGES | Gate-Emitter Voltage | 30 | V | ||||
| tSC | Short circuit withstand time VGE=15V, VCC400V, allowed number of short circuits<1000,times between short circuits1.0s,TJ175C | 8 | s | ||||
| PD | Power Dissipation @TC=25C | 250 | W | ||||
| TJmax, Tstg | Operating Junction and Storage Temperature Range | 55 to 175 | |||||
| TL | Maximum Temperature for Soldering | 260 | |||||
| RJC | Junction-to-Case (IGBT) | 0.60 | /W | ||||
| Junction-to-Case (Diode) | 0.55 | /W | |||||
| RJA | Junction-to-Ambient | 40 | /W | ||||
| VCE(sat) | Collector-Emitter Saturation Voltage | VGE =15V, IC =60A, TJ=25 | 1.65 | V | |||
| VGE =15V, IC =60A, TJ=125 | 1.85 | V | |||||
| VGE =15V, IC =60A, TJ=175 | 2.00 | V | |||||
| VF | Diode Forward Voltage | IF=50A, TJ=25 | 1.65 | V | 2.05 | ||
| IF=50A, TJ=125 | 1.57 | V | |||||
| IF=50A, TJ=175 | 1.47 | V | |||||
| ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 10 | A | |||
| IGES(F) | Gate-Emitter Forward Leakage Current | VGE=+20V | 200 | nA | |||
| IGES(R) | Gate-Emitter Reverse Leakage Current | VGE=-20V | -200 | nA | |||
| td(on) | Turn-on Delay Time | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 24 | ns | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 30 | ns | |||||
| tr | Rise Time | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 88 | ns | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 95 | ns | |||||
| td(off) | Turn-Off Delay Time | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 124 | ns | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 152 | ns | |||||
| tf | Fall Time | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 73 | ns | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 67 | ns | |||||
| Eon | Turn-On Switching Loss | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.40 | mJ | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 1.62 | mJ | |||||
| Eoff | Turn-Off Switching Loss | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 1.20 | mJ | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 1.50 | mJ | |||||
| Ets | Total Switching Loss | IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=25 | 2.60 | mJ | |||
| IC=60A, VCC=400V, VGE=15V, Rg=5, Inductive Load, TJ=175 | 3.12 | mJ | |||||
| Trr | Reverse Recovery Time | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 136 | ns | |||
| IF=60A, VCC=400V, di/dt=200A/s, TJ=175 | 183 | ns | |||||
| Qrr | Reverse Recovery Charge | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 350 | nC | |||
| IF=60A, VCC=400V, di/dt=200A/s, TJ=175 | 560 | nC | |||||
| Irrm | Reverse Recovery Current | IF=60A, VCC=400V, di/dt=200A/s, TJ=25 | 6.9 | A | |||
| IF=60A, VCC=400V, di/dt=200A/s, TJ=175 | 7.8 | A |
2509181738_HXY-MOSFET-IKW60N60H3-HXY_C49003414.pdf
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