IGBT transistor JIAENSEMI JNG20T65FS1 650V 20A TO220F package suitable for motor control applications
Key Attributes
Model Number:
JNG20T65FS1
Product Custom Attributes
Pd - Power Dissipation:
40W
Td(off):
71ns
Td(on):
17ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7.5pF
Input Capacitance(Cies):
831pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.1V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
50pF
Reverse Recovery Time(trr):
110ns
Switching Energy(Eoff):
410uJ
Turn-On Energy (Eon):
460uJ
Mfr. Part #:
JNG20T65FS1
Package:
TO-220F
Product Description
JNG20T65FS1 IGBT
The JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as motor control, general inverters, and other soft switching applications. Key features include a 650V, 20A rating, low VCE(sat) of 2.0V (typ.), high-speed switching, and soft current turn-off waveforms.
Product Attributes
- Brand: JIAEN
- Product Series: Trench IGBTs
- Package Type: TO-220F
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | ±30 | V | |||
| Continuous Collector Current (TC=25) | IC | 40 | A | |||
| Continuous Collector Current (TC=100) | IC | 20 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 60 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 20 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 60 | A | |||
| Short Circuit Withstand Time | tsc | 10 | µs | |||
| Maximum Power Dissipation (TC=25) | PD | 40 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 16 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 3.125 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 3.8 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62.5 | / W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | µA |
| Gate Leakage Current, Forward | IGES | VGE=±20V, VCE= 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 5.1 | - | 6.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 20A | - | 2.0 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=20A | - | 271 | - | nC |
| Gate-Emitter Charge | Qge | - | 70 | - | nC | |
| Gate-Collector Charge | Qgc | - | 131 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=20A RG=15Ω Inductive Load TC=25 ˆC | - | 17 | - | ns |
| Turn-on Rise Time | tr | - | 31 | - | ns | |
| Turn-off Delay Time | td(off) | - | 71 | - | ns | |
| Turn-off Fall Time | tf | - | 99 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.46 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.41 | - | mJ | |
| Total Switching Loss | Ets | - | 0.87 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 831 | - | pF |
| Output Capacitance | Coes | - | 50 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 7.5 | - | pF | |
| Electrical Characteristics of Diode (TC=25 unless otherwise noted) | ||||||
| Diode Forward Voltage | VF | IF=20A | - | 1.5 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 20ARg=15Ω | - | 110 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 16.6 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 736 | - | nC | |
2509021810_JIAENSEMI-JNG20T65FS1_C51484246.pdf
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