NPT IGBT JIAENSEMI JNG25N120HS 1200V 45A suitable for induction heating UPS and inverter applications
Key Attributes
Model Number:
JNG25N120HS
Product Custom Attributes
Td(off):
253ns
Pd - Power Dissipation:
220W
Td(on):
21ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
89pF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-55℃~+150℃
Reverse Recovery Time(trr):
240ns
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
1.5mJ
Input Capacitance(Cies):
1.13nF
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
162pF
Mfr. Part #:
JNG25N120HS
Package:
TO-247
Product Description
JNG25N120HS IGBT
JIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA using NPT technology.
Product Attributes
- Brand: JIAEN
- Model: JNG25N120HS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 1200 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 45 | A | |||
| Continuous Collector Current (TC=100) | IC | 25 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 75 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 25 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 60 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 220 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 100 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 0.45 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 0.85 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 40 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 1200 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 1200V, VGE= 0V | - | 250 | uA | |
| Gate Leakage Current, Forward | IGES | VGE=30V, VCE= 0V | - | 100 | nA | |
| Gate Leakage Current, Reverse | IGES | VGE= -30V, VCE= 0V | - | -100 | nA | |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | 5.0 | 5.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 25A | 2.2 | 2.7 | V | |
| Total Gate Charge | Qg | VCC=960V VGE=15V IC=25A | 125 | nC | ||
| Gate-Emitter Charge | Qge | 29 | nC | |||
| Gate-Collector Charge | Qgc | 67 | nC | |||
| Turn-on Delay Time | td(on) | VCC=600V VGE=15V IC=25A RG=15 Inductive Load TC=25 | 21 | ns | ||
| Turn-on Rise Time | tr | 46 | ns | |||
| Turn-off Delay Time | td(off) | 253 | ns | |||
| Turn-off Fall Time | tf | 38 | ns | |||
| Turn-on Switching Loss | Eon | 1.5 | mJ | |||
| Turn-off Switching Loss | Eoff | 0.8 | mJ | |||
| Total Switching Loss | Ets | 2.3 | mJ | |||
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | 1130 | pF | ||
| Output Capacitance | Coes | 162 | pF | |||
| Reverse Transfer Capacitance | Cres | 89 | pF | |||
| Integrated gate resistor | RGint | 3.8 | ||||
| Diode Forward Voltage | VF | IF=25A | 2.0 | 2.65 | V | |
| Diode Reverse Recovery Time | trr | VCE = 600V IF= 25A Rg=15 | 240 | ns | ||
| Diode peak Reverse Recovery Current | IRR | 20 | A | |||
| Diode Reverse Recovery Charge | QRR | 1672 | nC |
2509021810_JIAENSEMI-JNG25N120HS_C51484266.pdf
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