High current HXY MOSFET RGT00TS65DGC11-HXY with 50A rating and advanced trench field stop technology
Key Attributes
Model Number:
RGT00TS65DGC11-HXY
Product Custom Attributes
Td(off):
122ns
Pd - Power Dissipation:
300W
Td(on):
24ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
92pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@1mA
Operating Temperature:
-55℃~+175℃
Gate Charge(Qg):
179nC@15V
Reverse Recovery Time(trr):
98ns
Switching Energy(Eoff):
1.14mJ
Turn-On Energy (Eon):
1.38mJ
Input Capacitance(Cies):
3.363nF
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
206pF
Mfr. Part #:
RGT00TS65DGC11-HXY
Package:
TO-247
Product Description
Product Description
The RGT00TS65DGC11 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is designed for applications requiring efficient power management and fast switching capabilities.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Model: RGT00TS65DGC11
- Package Type: TO-247
- Certifications: Halogen Free, Green Devices Available, RoHS Compliant
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 650 | V | Collector-Emitter Voltage |
| IC | 50 | A | Collector Current @TC=100C |
| VCE(sat).typ | 1.65 | V | Collector-Emitter Saturation Voltage (Typical) |
| PD | 300 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC | 0.50 | /W | Junction-to-Case (IGBT) |
| RJA | 40 | /W | Junction-to-Ambient |
| VGE(TH) | 4.5 - 6.5 | V | Gate Threshold Voltage |
| ICES | -- | A | Collector-Emitter Leakage Current @VCE=650V, VGE=0V |
| Cies | 3363 | pF | Input Capacitance |
| Qg | 179 | nC | Gate charge |
| td(on) | 24 | ns | Turn-on Delay Time @TJ=25C |
| tr | 86 | ns | Rise Time @TJ=25C |
| td(off) | 122 | ns | Turn-Off Delay Time @TJ=25C |
| tf | 74 | ns | Fall Time @TJ=25C |
| Eon | 1.38 | mJ | Turn-On Switching Loss @TJ=25C |
| Eoff | 1.14 | mJ | Turn-Off Switching Loss @TJ=25C |
| Ets | 2.52 | mJ | Total Switching Loss @TJ=25C |
| Trr | 98 | ns | Reverse Recovery Time @TJ=25C |
| Qrr | 1580 | C | Reverse Recovery Charge @TJ=25C |
| Irrm | 26 | A | Reverse Recovery Current @TJ=25C |
Applications
- UPS
- Motor drives
- Boost
- Portable power station
2509181737_HXY-MOSFET-RGT00TS65DGC11-HXY_C49003320.pdf
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