IGBT transistor HXY MOSFET IXYP15N65C3D1M-HXY for energy storage UPS and three phase solar inverters
Key Attributes
Model Number:
IXYP15N65C3D1M-HXY
Product Custom Attributes
Td(off):
156ns
Pd - Power Dissipation:
250W
Td(on):
46ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6.4V@400uA
Gate Charge(Qg):
51nC
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
34pF
Reverse Recovery Time(trr):
159ns
Switching Energy(Eoff):
190uJ
Turn-On Energy (Eon):
400uJ
Mfr. Part #:
IXYP15N65C3D1M-HXY
Package:
TO-220F
Product Description
Product Overview
The IXYP15N65C3D1M is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-charging, three-phase solar string inverters, and energy storage systems. Manufactured by HUAXUANYANG HXY ELECTRONICS CO.,LTD.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: IXYP15N65C3D1M
- Package: TO-220F
- Packing: 50PCS
Technical Specifications
| Parameter | Value | Units | Conditions |
| Key Performance Parameters | |||
| VC Device E | 650 | V | (TC = 25 C) |
| IC | 15 | A | (TC = 25 C) |
| VCE(SAT) | 1.79 | V | (TVJ = 25 C, VGE = 15 V) |
| Tvjmax | 175 | C | |
| Absolute Maximum Ratings | |||
| VCE | 650 | V | Collector emitter voltage |
| IC | 30 | A | DC collector current, TC = 25C |
| IC | 15 | A | DC collector current, TC = 100C |
| ICM | 60 | A | Pulsed collector current, TC = 25C |
| IF | 30 | A | Maximum Diode forward current, TC = 25C |
| IF | 15 | A | Maximum Diode forward current, TC = 100C |
| IFM | 150 | A | Diode pulsed current, TC = 25C |
| VGE | 20 | V | Gate-Emitter voltage, TVJ = 25C |
| Ptot | 250 | W | Power Dissipation, TC = 25C |
| Ptot | 125 | W | Power Dissipation, TC = 100C |
| TVJ | -40 to +175 | C | Operating Junction Temperature Range |
| TSTG | -55 to +150 | C | Storage Temperature Range |
| Features | |||
| V CESAT | Low | Low Saturation Voltage | |
| Thermal Resistance | |||
| RJA | 60 | C/W | Thermal resistance: junction - ambient |
| RJC (IGBT) | 1.5 | C/W | Thermal resistance: junction - case IGBT |
| RJC (Diode) | 2.0 | C/W | Thermal resistance: junction - case Diode |
| Electrical Characteristics | |||
| V(BR)CES | 650 | V | Collector - Emitter Breakdown Voltage, VGE = 0V , IC = 0.5mA |
| VCESAT | 1.79 | V | Collector - Emitter Saturation Voltage, VGE = 15V , IC = 15A |
| VCESAT | 2.2 | V | Collector - Emitter Saturation Voltage, VGE = 15V , IC = 15A ,TVJ = 125C |
| VCESAT | 2.4 | V | Collector - Emitter Saturation Voltage, VGE = 15V , IC = 15A ,TVJ = 175C |
| VF | 1.68 | V | Diode forward voltage, VGE = 0V , IC = 15A |
| VF | 1.48 | V | Diode forward voltage, VGE = 0V , IC = 15A ,TVJ = 125C |
| VF | 1.40 | V | Diode forward voltage, VGE = 0V , IC = 15A ,TVJ = 175C |
| VGE(th) | 6.4 | V | Gate-Emitter threshold voltage, VGE = VCE, IC = 400mA |
| ICES | 1.0 | mA | Zero Gate voltage Collector current, VCE = 650V , VGE = 0V |
| IGES | 100 | nA | Gate-Emitter leakage current, VGE = 20V , VCE = 0V |
| Dynamic Characteristics | |||
| Cies | 1470 | pF | Input Capacitance, VGE = 0V, VCE = 25V, f = 1MHz |
| Coes | 34 | pF | Output Capacitance |
| Cres | 11 | pF | Reverse Transfer Capacitance |
| RG | 1.2 | Gate input resistance, f = 1M HZ | |
| Qg | 51 | nC | Gate Charge, VGE = 0 to 15V VCE = 520V, IC = 15A |
| Qge | 8 | nC | Gate to Emitter charge |
| Qgc | 20 | nC | Gate to Collector charge |
| Qgth | 7 | nC | Gate to collector charge |
| LE | 13 | nH | Internal Emitter Inductance |
| Switching Characteristics | |||
| td(on) | 46 | ns | Turn-On DelayTime, Tvj = 25 C VGE = 15V, VCC = 400V IC=15A, RG = 39 |
| tr | 32 | ns | Turn-On Rise Time |
| td(off) | 156 | ns | Turn-Off DelayTime |
| tf | 40 | ns | Turn-Off Fall Time |
| Eon | 0.4 | mJ | Turn-on energy |
| Eoff | 0.19 | mJ | Turn-off energy |
| Ets | 0.59 | mJ | Total switching energy |
| Diode Recovery Characteristics | |||
| Trr | 159 | ns | Reverse recovery time, Tvj = 25 C VCE=400V,IC=15A,VGE=15V RG=39 |
| Qrr | 0.65 | mC | Reverse recovery charge |
| Irrm | 7.8 | A | Peak reverse recovery current |
| Eres | -420 | mJ | Reverse recovery energy |
2509181737_HXY-MOSFET-IXYP15N65C3D1M-HXY_C49003315.pdf
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