Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance
Key Attributes
Model Number:
JNG15T65KS1
Product Custom Attributes
Pd - Power Dissipation:
100W
Td(off):
94ns
Td(on):
16ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
7pF
Input Capacitance(Cies):
629pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Operating Temperature:
-55℃~+150℃
Pulsed Current- Forward(Ifm):
45A
Output Capacitance(Coes):
45pF
Reverse Recovery Time(trr):
120ns
Switching Energy(Eoff):
320uJ
Turn-On Energy (Eon):
310uJ
Mfr. Part #:
JNG15T65KS1
Package:
TO-263
Product Description
JNG15T65KS1 IGBT
JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.
Product Attributes
- Brand: JIAEN
- Model: JNG15T65KS1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Collector-Emitter Voltage | VCES | 650 | V | |||
| Gate-Emitter Voltage | VGES | +30 | V | |||
| Continuous Collector Current (TC=25) | IC | 30 | A | |||
| Continuous Collector Current (TC=100) | IC | 15 | A | |||
| Pulsed Collector Current (Note 1) | ICM | 45 | A | |||
| Diode Continuous Forward Current (TC=100) | IF | 15 | A | |||
| Diode Maximum Forward Current (Note 1) | IFM | 45 | A | |||
| Short Circuit Withstand Time | tsc | 10 | us | |||
| Maximum Power Dissipation (TC=25) | PD | 100 | W | |||
| Maximum Power Dissipation (TC=100) | PD | 40 | W | |||
| Operating Junction Temperature Range | TJ | -55 | +150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Resistance, Junction to case for IGBT | Rth j-c | 1.25 | / W | |||
| Thermal Resistance, Junction to case for Diode | Rth j-c | 2.3 | / W | |||
| Thermal Resistance, Junction to Ambient | Rth j-a | 62.5 | / W | |||
| Collector-Emitter Breakdown Voltage | BVCES | VGE= 0V, IC= 250uA | 650 | - | - | V |
| Collector-Emitter Leakage Current | ICES | VCE= 650V, VGE= 0V | - | - | 100 | uA |
| Gate Leakage Current, Forward | IGES | VGE=20V, VCE= 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGE(th) | VGE= VCE, IC= 250uA | 4.5 | - | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC= 15A | - | 1.9 | 2.5 | V |
| Total Gate Charge | Qg | VCC=480V VGE=15V IC=15A | - | 40.7 | - | nC |
| Gate-Emitter Charge | Qge | - | 4.19 | - | nC | |
| Gate-Collector Charge | Qgc | - | 30.7 | - | nC | |
| Turn-on Delay Time | td(on) | VCC=400V VGE=15V IC=15A RG=15 Inductive Load TC=25 | - | 16 | - | ns |
| Turn-on Rise Time | tr | - | 20 | - | ns | |
| Turn-off Delay Time | td(off) | - | 94 | - | ns | |
| Turn-off Fall Time | tf | - | 118 | - | ns | |
| Turn-on Switching Loss | Eon | - | 0.31 | - | mJ | |
| Turn-off Switching Loss | Eoff | - | 0.32 | - | mJ | |
| Total Switching Loss | Ets | - | 0.63 | - | mJ | |
| Input Capacitance | Cies | VCE=25V VGE=0V f = 1MHz | - | 629 | - | pF |
| Output Capacitance | Coes | - | 45 | - | pF | |
| Reverse Transfer Capacitance | Cres | - | 7 | - | pF | |
| Diode Forward Voltage | VF | IF=15A | - | 1.55 | 3.0 | V |
| Diode Reverse Recovery Time | trr | VCE = 400V IF= 15A Rg=15 | - | 120 | - | ns |
| Diode peak Reverse Recovery Current | IRR | - | 17.5 | - | A | |
| Diode Reverse Recovery Charge | Qrr | - | 690 | - | nC |
2509021810_JIAENSEMI-JNG15T65KS1_C51484242.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
