Durable HXY MOSFET STGWA100H65DFB2-HXY IGBT with TO-247 Package and High Diode Forward Current Rating
Key Attributes
Model Number:
STGWA100H65DFB2-HXY
Product Custom Attributes
Td(off):
195ns
Pd - Power Dissipation:
429W
Td(on):
27ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
26pF
Input Capacitance(Cies):
3.452nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@0.88mA
Gate Charge(Qg):
156nC@15V
Pulsed Current- Forward(Ifm):
300A
Output Capacitance(Coes):
223pF
Reverse Recovery Time(trr):
123ns
Switching Energy(Eoff):
1.65mJ
Turn-On Energy (Eon):
3.3mJ
Mfr. Part #:
STGWA100H65DFB2-HXY
Package:
TO-247
Product Description
Product Overview
The STGWA100H65DFB2 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage (VCE(SAT)), low switching losses, and rugged transient reliability. This IGBT is suitable for demanding industrial applications including Industrial UPS, EV-Charging, String inverters, and Welding.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: STGWA100H65DFB2
- Package: TO-247
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Collector emitter voltage (VC) | TVJ = 25C | 650 | V | ||
| DC collector current (IC) | limited by Tvjmax, TC = 25C | 150 | A | ||
| DC collector current (IC) | limited by Tvjmax, TC = 100C | 100 | A | ||
| Pulsed collector current (ICpul) | limited by Tvjmax | 300 | A | ||
| Maximum Diode forward current (IF) | limited by Tvjmax, TC = 25C | 150 | A | ||
| Maximum Diode forward current (IF) | limited by Tvjmax, TC = 100C | 100 | A | ||
| Diode pulsed current (IFpul) | limited by Tvjmax | 300 | A | ||
| Gate-Emitter voltage (VGE) | TVJ = 25C | 20 | V | ||
| Power Dissipation (Pto) | TC = 25C | 429 | W | ||
| Power Dissipation (Pto) | TC = 100C | 214 | W | ||
| Operating Junction Temperature Range (TvjO) | -55 | +175 | C | ||
| Storage Temperature Range (TST) | -55 | +175 | C | ||
| Temperature under switching conditions | -40 | +150 | C | ||
| Collector - Emitter Breakdown Voltage (V(BR)CES) | VGE = 0V , IC = 1mA , TVJ = 25C | 650 | - | - | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 100A ,TVJ = 25C | - | 1.45 | - | V |
| Collector - Emitter Saturation Voltage (VCESAT) | VGE = 15V , IC = 100A ,TVJ = 175C | - | 1.75 | - | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 100A ,TVJ = 25C | - | 1.55 | - | V |
| Diode forward voltage (VF) | VGE = 0V , IC = 100A ,TVJ = 175C | - | 1.6 | - | V |
| Gate-Emitter threshold voltage (VGE(th)) | VGE = VCE, IC = 0.88mATVJ = 25C | - | 4 | - | V |
| Zero Gate voltage Collector current (ICES) | VCE = 650V , VGE = 0VTVJ = 25C | - | - | 100 | mA |
| Gate-Emitter leakage current (IGES) | VGE = 20V , VCE = 0V | - | - | 100 | nA |
| Gate-Emitter leakage current (IGES) | VGE = -20V, VCE = 0V | -100 | - | - | nA |
| Input Capacitance (Cies) | VGE = 0V, VCE = 25V, f = 100K Hz | - | 3452 | - | pF |
| Output Capacitance (Coes) | - | 223 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 26 | - | pF | |
| Gate Charge (Qg) | VGE = 0 to 15V VCE = 520V, IC = 100A | - | 156 | - | nC |
| Turn-On Delay Time (td(on)) | Tvj = 25 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| Turn-On Rise Time (tr) | - | 58 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 195 | - | ns | |
| Turn-Off Fall Time (tf) | - | 66 | - | ns | |
| Turn-on energy (Eon) | - | 3.3 | - | mJ | |
| Turn-off energy (Eoff) | - | 1.65 | - | mJ | |
| Total switching energy (Ets) | - | 4.35 | - | mJ | |
| Turn-On Delay Time (td(on)) | Tvj = 175 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 27 | - | ns |
| Turn-On Rise Time (tr) | - | 50 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 215 | - | ns | |
| Turn-Off Fall Time (tf) | - | 58 | - | ns | |
| Turn-on energy (Eon) | - | 3.77 | - | mJ | |
| Turn-off energy (Eoff) | - | 2.07 | - | mJ | |
| Total switching energy (Ets) | - | 5.84 | - | mJ | |
| Reverse recovery time (Trr) | Tvj = 25 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 123 | - | ns |
| Reverse recovery charge (Qrr) | - | 1.95 | - | mC | |
| Peak reverse recovery current (Irrm) | - | 30.8 | - | A | |
| Reverse recovery energy (Erec) | - | 0.47 | - | mJ | |
| Reverse recovery time (Trr) | Tvj = 175 C, VCE = 400 V, IC = 100 A, VGE = 0 / 15 V, RG(on) = 10 , RG(off) = 10 | - | 150 | - | ns |
| Reverse recovery charge (Qrr) | - | 3.85 | - | mC | |
| Peak reverse recovery current (Irrm) | - | 44.1 | - | A | |
| Reverse recovery energy (Erec) | - | 0.98 | - | mJ | |
| IGBT Thermal resistance: junction - case (RthJC) | - | 0.25 | 0.35 | C/W | |
| Diode Thermal resistance: junction - case (RthJC) | - | 0.28 | 0.38 | C/W |
2509181737_HXY-MOSFET-STGWA100H65DFB2-HXY_C49003309.pdf
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