switching device HXY MOSFET RGS80TSX2GC11-HXY optimized for conduction loss reduction and efficiency
Key Attributes
Model Number:
RGS80TSX2GC11-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
RGS80TSX2GC11-HXY
Package:
TO-247
Product Description
RGS80TSX2GC11 Insulated Gate Bipolar Transistor
The RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching efficiency, and increasing avalanche energy. It is designed for applications requiring high reliability and performance, such as motor drives and onboard chargers (OBC).
Product Attributes
- Brand: HUAXUANYANG
- Model: RGS80TSX2GC11
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: Trench and Field Stop (T-FS)
- Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen Free and Green Devices Available
- Package Type: TO-247
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC (@TC=25C) | 80 | A | Collector Current |
| IC (@TC=100C) | 40 | A | Collector Current |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VGE(TH) (Typ.) | 5.3 | V | Gate Threshold Voltage |
| VCE(sat).typ (@IC=40A, TJ=25C) | 1.70 | V | Collector-Emitter Saturation Voltage |
| PD (@TC=25C) | 441 | W | Power Dissipation |
| TJmax, Tstg | 55 to 175 | Operating Junction and Storage Temperature Range | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| Cies (Typ.) | 3980 | pF | Input Capacitance |
| Qg (Typ.) | 346 | nC | Gate charge |
| td(on) (Typ. @TJ=25C) | 25 | ns | Turn-on Delay Time |
| tr (Typ. @TJ=25C) | 28 | ns | Rise Time |
| td(off) (Typ. @TJ=25C) | 262 | ns | Turn-Off Delay Time |
| tf (Typ. @TJ=25C) | 149 | ns | Fall Time |
| Eon (Typ. @TJ=25C) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (Typ. @TJ=25C) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (Typ. @TJ=25C) | 3.60 | mJ | Total Switching Loss |
| Trr (Typ. @TJ=25C) | 94 | ns | Reverse Recovery Time |
| Qrr (Typ. @TJ=25C) | 225 | nC | Reverse Recovery Charge |
| Irrm (Typ. @TJ=25C) | 9.7 | A | Reverse Recovery Current |
2509181738_HXY-MOSFET-RGS80TSX2GC11-HXY_C49003434.pdf
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