SOT223 package HXY MOSFET X0202MN5BA4-HXY for in ignition systems and residual current circuit breakers
Key Attributes
Model Number:
X0202MN5BA4-HXY
Product Custom Attributes
Mfr. Part #:
X0202MN5BA4-HXY
Package:
SOT-223
Product Description
Product Overview
The X0202MN5BA4 thyristors offer a high dv/dt rate with strong resistance to electromagnetic interference. They are particularly recommended for applications such as residual current circuit breakers, straight hair devices, and igniters.
Product Attributes
- Brand: HUAXUANYANG HXY
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | Tstg | -40~150 | C | Storage junction temperature range | |
| Tj | 125 | C | Operating junction temperature range | ||
| VDRM/VRRM | 600 | V | Repetitive peak off-state voltage (Tj=25C) / Repetitive peak reverse voltage (Tj=25C) | ||
| On-state Current | IT(RMS) | 2.0 | A | ||
| Non-repetitive Surge Peak On-state Current | ITSM | 20 | A | (full cycle, F=50Hz) | |
| Electrical Characteristics | IGT | 90 | mA | VD=12V, RL=100 | |
| VGT | 0.8 | V | IG=0.1mA | ||
| VGD | 0.2 | - | VD=1/2VDRM | ||
| IH | - | - | mA | IT=100mA, RGK=1k | |
| dV/dt | 20 | V/s | VD=67%VDRM Tj=110C RGK=1K | ||
| VTM | 1.6 | V | IT =2A | ||
| IDRM / IRRM | - | - | mA | VD=VDRM= VRRM RGK=1k |
2511211720_HXY-MOSFET-X0202MN5BA4-HXY_C52988586.pdf
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