power management using Jilin Sino Microelectronics JCS15N70FC N channel MOSFET for UPS and ballasts
Key Attributes
Model Number:
JCS15N70FC
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14.1pF
Number:
-
Output Capacitance(Coss):
304pF
Input Capacitance(Ciss):
2.84nF
Pd - Power Dissipation:
568W
Gate Charge(Qg):
51.3nC@10V
Mfr. Part #:
JCS15N70FC
Package:
TO-220MF
Product Description
Product Overview
The JCS15N70C is an N-channel MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it a reliable choice for demanding applications. This RoHS-compliant product is available in TO-220C and TO-220MF packages.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
- Material: Halogen Free (No)
Technical Specifications
| Order Code | Marking | Package | Device Weight | ID (A) | VDSS (V) | Rds(on)-max (@Vgs=10V) () | Qg-typ (nC) |
| JCS15N70CC-O-C-N-B | JCS15N70C | TO-220C | 2.15 g(typ) | 15.0 | 700 | 0.55 | 44.6 |
| JCS15N70FC-O-F-N-B | JCS15N70F | TO-220MF | 2.20 g(typ) | 15.0 | 700 | 0.55 | 44.6 |
Absolute Maximum Ratings (Tc=25)
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 700 | V |
| Drain Current -continuous (T=25) | ID | 15.0* | A |
| Drain Current -continuous (T=100) | ID | 9.5* | A |
| Drain Current - pulse (note 1) | IDM | 60* | A |
| Gate-Source Voltage | VGSS | 30 | V |
| Single Pulsed Avalanche Energy (note 2) | EAS | 910 | mJ |
| Avalanche Current (note 1) | IAR | 15.0 | A |
| Repetitive Avalanche Energy (note 1) | EAR | 56.8 | mJ |
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 4.7 | V/ns |
| Power Dissipation (TC=25) | PD | 568 | W |
| Operating and Storage Temperature Range | TJTSTG | -55+150 | |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
Electrical Characteristics (Tc=25 unless otherwise specified)
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250A, VGS=0V | 700 | - | - | V |
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | ID=250A, referenced to 25 | - | 0.64 | - | V/ |
| Zero Gate Voltage Drain Current | IDSS | VDS=700V,VGS=0V, TC=25 | - | - | 10 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=560V, TC=125 | - | - | 100 | A |
| Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS =-30V | - | - | -100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250A | 3.0 | - | 5.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=7.5A | - | 0.45 | 0.55 | |
| Forward Transconductance | gfs | VDS = 40V, ID=15Anote 4 | - | 15.45 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 2185 | 2840 | pF |
| Output capacitance | Coss | VDS=25V, VGS =0V, f=1.0MHZ | - | 235 | 304 | pF |
| Reverse transfer capacitance | Crss | VDS=25V, VGS =0V, f=1.0MHZ | - | 10.79 | 14.1 | pF |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=350V,ID=15A,RG=25 note 45 | - | 52.8 | 66 | ns |
| Turn-On rise time | tr | VDD=350V,ID=15A,RG=25 note 45 | - | 112 | 140 | ns |
| Turn-Off delay time | td(off) | VDD=350V,ID=15A,RG=25 note 45 | - | 94.4 | 118 | ns |
| Turn-Off Fall time | tf | VDD=350V,ID=15A,RG=25 note 45 | - | 43.2 | 54 | ns |
| Total Gate Charge | Qg | VDS =560V , ID=15A VGS =10V note 45 | - | 44.6 | 51.3 | nC |
| Gate-Source charge | Qgs | VDS =560V , ID=15A VGS =10V note 45 | - | 12.7 | - | nC |
| Gate-Drain charge | Qgd | VDS =560V , ID=15A VGS =10V note 45 | - | 22 | - | nC |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Maximum Continuous Drain -Source Diode Forward Current | IS | - | - | - | 15 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | 60 | A |
| Drain-Source Diode Forward Voltage | VSD | VGS=0V, IS=15.0A | - | - | 1.4 | V |
| Reverse recovery time | trr | VGS=0V, IS=15.0A dIF/dt=100A/s (note 4) | - | 552 | - | ns |
| Reverse recovery charge | Qrr | VGS=0V, IS=15.0A dIF/dt=100A/s (note 4) | - | 6.18 | - | C |
Thermal Characteristics
| Parameter | Symbol | Max | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.22 (JCS15N70CC) / 2.0 (JCS15N70FC) | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 62.5 | /W |
2409280202_Jilin-Sino-Microelectronics-JCS15N70FC_C2693267.pdf
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