Jilin Sino Microelectronics JCS2N60V MOSFET designed for switching in power supplies and UPS applications
Key Attributes
Model Number:
JCS2N60V
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9.9pF
Number:
1 N-channel
Output Capacitance(Coss):
46pF
Input Capacitance(Ciss):
490pF
Pd - Power Dissipation:
44W
Gate Charge(Qg):
15.3nC@10V
Mfr. Part #:
JCS2N60V
Package:
IPAK
Product Description
Product Overview
The JCS2N60 is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and UPS applications. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, improved dv/dt capability, and is RoHS compliant.
Product Attributes
- Brand: Jilin Sino-microelectronics Co., Ltd.
- Certifications: RoHS
Technical Specifications
| Order Code | Marking | Package | ID (A) | VDSS (V) | Rds(on)-max () (Vgs=10V) | Qg (nC) |
| JCS2N60R | -R-B/-R-BR/-R-A/-R-AR | DPAK | 2.0 | 600 | 5 | 15.3 |
| JCS2N60V | -V-B/-V-BR | IPAK | 2.0 | 600 | 5 | 15.3 |
| JCS2N60C | -C-B/-C-BR | TO-220C | 2.0 | 600 | 5 | 15.3 |
| JCS2N60F | -F-B/-F-BR | TO-220MF | 2.0 | 600 | 5 | 15.3 |
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVBDSS | ID=250A, VGS=0V | 600 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V, Tj=25 | - | - | 10 | A |
| Gate-Body Leakage Current, Forward | IBGSSF | VDS=0V, VGS=30V | - | - | 100 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=1A | - | 3.8 | 5.0 | |
| Forward Transconductance | gfs | VDS=40V, ID=1.0A | - | 2.05 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 180 | 380 | 490 | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 16 | 35 | 46 | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 3.0 | 7.6 | 9.9 | pF |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=480V, ID=2.0A, VGS=10V | - | 15.3 | 19 | nC |
| Drain-Source Diode Characteristics | ||||||
| Reverse recovery time | trr | VGS=0V, IS=2.0A, diF/dt=100A/s | - | 250 | 600 | ns |
| Parameter | Symbol | JCS2N60V/R | JCS2N60C | JCS2N60F | Unit |
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.87 | 2.32 | 5.50 | /W |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 110 | 62.5 | 62.5 | /W |
2409280132_Jilin-Sino-Microelectronics-JCS2N60V_C2693294.pdf
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