HXY MOSFET IXA45IF1200HB HXY IGBT with 1200V Collector Emitter Voltage and Fast Switching Capability
Key Attributes
Model Number:
IXA45IF1200HB-HXY
Product Custom Attributes
Pd - Power Dissipation:
441W
Td(off):
262ns
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
93pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.3V@1mA
Gate Charge(Qg):
346nC@15V
Reverse Recovery Time(trr):
94ns
Switching Energy(Eoff):
2.3mJ
Turn-On Energy (Eon):
1.3mJ
Input Capacitance(Cies):
3.98nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
157pF
Mfr. Part #:
IXA45IF1200HB-HXY
Package:
TO-247
Product Description
IXA45IF1200HB Insulated Gate Bipolar Transistor
The IXA45IF1200HB is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy handling. It is designed for applications such as PTC, motor drives, and onboard chargers (OBC), offering features like a positive temperature coefficient, fast switching, low VCE(sat), and a rugged, reliable design.
Product Attributes
- Brand: HUAXUANYANG
- Model: IXA45IF1200HB
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Technology: Trench and Field Stop (T-FS)
- Package Type: TO-247
- Certifications: AEC-Q101 Qualified, RoHS Compliant
- Environmental: Halogen Free and Green Devices Available
Technical Specifications
| Parameter | Value | Unit | Description |
| VCES | 1200 | V | Collector-Emitter Voltage |
| IC | 40 | A | Collector Current @TC=100C |
| IC (25C) | 80 | A | Collector Current @TC=25C |
| ICM | 160 | A | Pulsed Collector Current, tp limited by TJmax |
| VCE(sat).typ | 1.70 | V | Collector-Emitter Saturation Voltage (Typ.) |
| VGES | 30 | V | Gate-Emitter Voltage |
| PD (25C) | 441 | W | Power Dissipation @TC=25C |
| TJmax, Tstg | -55 to 175 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| RJC (IGBT) | 0.34 | /W | Junction-to-Case (IGBT) |
| RJC (Diode) | 0.80 | /W | Junction-to-Case (Diode) |
| RJA | 40 | /W | Junction-to-Ambient |
| VCE(sat) Typ (TJ=125) | 2.07 | V | Collector-Emitter Saturation Voltage |
| VCE(sat) Typ (TJ=175) | 2.20 | V | Collector-Emitter Saturation Voltage |
| VGE(TH) | 4.3 - 6.3 | V | Gate Threshold Voltage |
| VF Typ (IF=40A, TJ=25) | 1.85 | V | Diode Forward Voltage |
| VF Typ (IF=40A, TJ=125) | 1.70 | V | Diode Forward Voltage |
| VF Typ (IF=40A, TJ=175) | 1.61 | V | Diode Forward Voltage |
| ICES | 10 | A | Collector-Emitter Leakage Current @VCE=1200V, VGE=0V |
| IGES(F) | 200 | nA | Gate-Emitter Forward Leakage Current @VGE=+20V |
| IGES(R) | -200 | nA | Gate-Emitter Reverse Leakage Current @VGE=-20V |
| Cies | 3980 | pF | Input Capacitance |
| Coes | 157 | pF | Output Capacitance |
| Cres | 93 | pF | Reverse Transfer Capacitance |
| Qg | 346 | nC | Gate charge |
| td(on) (TJ=25) | 25 | ns | Turn-on Delay Time |
| tr (TJ=25) | 28 | ns | Rise Time |
| td(off) (TJ=25) | 262 | ns | Turn-Off Delay Time |
| tf (TJ=25) | 149 | ns | Fall Time |
| Eon (TJ=25) | 1.30 | mJ | Turn-On Switching Loss |
| Eoff (TJ=25) | 2.30 | mJ | Turn-Off Switching Loss |
| Ets (TJ=25) | 3.60 | mJ | Total Switching Loss |
| td(on) (TJ=175) | 26 | ns | Turn-on Delay Time |
| tr (TJ=175) | 35 | ns | Rise Time |
| td(off) (TJ=175) | 331 | ns | Turn-Off Delay Time |
| tf (TJ=175) | 224 | ns | Fall Time |
| Eon (TJ=175) | 2.20 | mJ | Turn-On Switching Loss |
| Eoff (TJ=175) | 3.70 | mJ | Turn-Off Switching Loss |
| Ets (TJ=175) | 5.90 | mJ | Total Switching Loss |
| Trr (TJ=25) | 94 | ns | Reverse Recovery Time |
| Qrr (TJ=25) | 225 | nC | Reverse Recovery Charge |
| Irrm (TJ=25) | 9.7 | A | Reverse Recovery Current |
| Trr (TJ=175) | 125 | ns | Reverse Recovery Time |
| Qrr (TJ=175) | 277 | nC | Reverse Recovery Charge |
| Irrm (TJ=175) | 11.2 | A | Reverse Recovery Current |
2509181737_HXY-MOSFET-IXA45IF1200HB-HXY_C49003399.pdf
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