motor control components including HXY MOSFET BT134-600 glass passivated triacs with plastic package
Key Attributes
Model Number:
BT134-600
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-600
Package:
TO-92
Product Description
Product Overview
Glass passivated triacs in a plastic package, designed for applications requiring high bidirectional transient and blocking voltage capability with excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)
- Origin: Shenzhen, China
- Package Type: TO-92
- Material: Plastic-Encapsulate Thyristors
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| VDRM /VRRM | repetitive peak off-state voltage | 600 | V | |||
| IGM | Peak Gate Current | - | A | |||
| VGM | Peak gate voltage | - | V | |||
| PGM | Peak gate power | 0.5 | W | |||
| Tj G(AV) | Junction Temperature | -40 ~ 125 | C | |||
| IT(RMS) | RMS on-state current | 16 | A | |||
| I 2 T | Non repetitive surge peak on-state current | t = 2ms T j =25 C | 200 | A | ||
| I 2 T | Non repetitive surge peak on-state current | t =16.7ms T j =25 C | 16 | A | ||
| I t | I t for fusing | t = 10 ms | 2 | A s | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | 50 | A/us | ||
| VDRM=VRRM | Repetitive Peak Off-State Current | Tj =125 C | 0.8 | mA | ||
| IDRM,IRRM | Repetitive Peak Reverse Current | VDRM= 5 mA | 0.8 | mA | ||
| VGD | Gate non-trigger voltage | VD= 1/2V DRM | 5 | V | ||
| VTM | On-state voltage | IT=2A,tp=380us | 1.65 | V | ||
| IGT | Gate trigger current | T2(+), G(+) VD=12V RL=100 | 10 | mA | ||
| IGT | Gate trigger current | T2(+), G(-) VD=12V RL=100 | 2 | mA | ||
| IGT | Gate trigger current | T2(-), G(+) VD=12V RL=100 | 2 | mA | ||
| IGT | Gate trigger current | T2(-), G(-) VD=12V RL=100 | 2 | mA | ||
| VGT | Gate trigger voltage | T2(+), G(+) VD=12V RL=100 | 2.5 | V | ||
| VGT | Gate trigger voltage | T2(+), G(-) VD=12V RL=100 | 2.5 | V | ||
| VGT | Gate trigger voltage | T2(-), G(+) VD=12V RL=100 | 2.5 | V | ||
| VGT | Gate trigger voltage | T2(-), G(-) VD=12V RL=100 | 2.5 | V | ||
| IH | Holding current | VD=12V,IGT=100mA | 0.8 | mA | ||
| dV/dt | Critical-rate of rise of commutation voltage | (dl/dt)c=5.4A/ms Gate open | 20 | V/us | ||
| t gt | Turn-on time | ITM =16A ,VDM=V DRM VDM=67%V DRM(MAX) | 3.3 | us | ||
| (dl/dt)c | Critical-rate of rise of commutation current | Tj =125 C | 5.4 | A/ms | ||
| Tstg | Storage Temperature | -40 ~ 150 | C |
2508121550_HXY-MOSFET-BT134-600_C50275349.pdf
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