AC switching component HXY MOSFET BTA20-800CW ideal for appliance motor speed control and static relays
Key Attributes
Model Number:
BTA20-800CW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
70mA
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
20A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
212A@60Hz
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA20-800CW
Package:
TO-220A
Product Description
Product Overview
The BTA20-800CW Triac series is designed for general-purpose AC switching applications in mains power. It serves as an ON/OFF switch in static relays, heating regulation, and induction motor starting circuits. Additionally, it is recommended for phase control operations in light dimmers and appliance motor speed controllers.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Model: BTA20-800CW
- Origin: Shenzhen
- Encapsulation: Plastic-Encapsulate
- Package: TO-220A
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameters | Value | Unit | Test Conditions | Quadrant | Notes |
| IT(RMS) | RMS on-state current (full sine wave) | 20 | A | Tc = 100 C | ||
| ITSM | Non repetitive surge peak on-state current (full cycle) | 200 | A | F = 50 Hz, tp = 20 ms, Tj initial = 25 C | ||
| ITSM | Non repetitive surge peak on-state current (full cycle) | 212 | A | F = 60 Hz, tp = 16.7 ms, Tj initial = 25 C | ||
| I2t | I2t value for fusing | 200 | As | tp = 10 ms | ||
| dl/dt | Critical rate of rise of on-state current | 100 | A/s | IG = 2 x IGT, tr 100 ns, F = 120 Hz, Tj = 125 C | ||
| VDSM/VRSM | Non repetitive surge peak off-state voltage | 800 | V | tp = 10 ms, Tj = 25 C | ||
| VDRM/VRRM | Non repetitive surge peak off-state voltage | 800 | V | |||
| IGM | Peak gate current | 4 | A | tp = 20 s, Tj = 125 C | ||
| PG(AV) | Average gate power dissipation | 1 | W | Tj = 125 C | ||
| Tstg | Storage junction temperature range | -40 to +150 | C | |||
| Tj | Operating junction temperature range | -40 to +125 | C | |||
| VT(1) | On-state voltage | Max. 0.85 | V | ITM = 22.5 A, tp = 380 s, Tj = 25 C | 1. For both polarities of A2 referenced to A1 | |
| VTO(1) | Threshold on-state voltage | V | Tj = 125 C | |||
| RD(1) | Dynamic resistance | Max. 25 | m | Tj = 125 C | ||
| IDRM/IRRM | Leakage current | Max. 5 | A | VDRM = VRRM, Tj = 25 C | ||
| IDRM/IRRM | Leakage current | Max. 2 | mA | VDRM = VRRM, Tj = 125 C | ||
| IGT(1) | Triggering gate current | Max. 50 | mA | VD = 12 V, RL = 33 , Tj = 25 C | I, II, III, IV | 1. Minimum IGT is guaranteed at 5 % of IGT max. |
| IGT(1) | Triggering gate current | Max. 35 | mA | VD = 12 V, RL = 33 , Tj = 25 C | I, II, III | 1. Minimum IGT is guaranteed at 5 % of IGT max. (Snubberless and logic level) |
| VGT | Gate trigger voltage | Max. 1.3 | V | All | ||
| VGD | Non-triggering gate voltage | Min. 0.2 | V | VD = VDRM, RL = 3.3 k, Tj = 125 C | All | |
| IH(2) | Holding current | Max. 70 | mA | IT = 100 mA, Tj = 25 C | I | 2. For both polarities of A2 referenced to A1 |
| IH(2) | Holding current | Max. 60 | mA | IT = 500 mA, Tj = 25 C | I, III | 2. For both polarities of A2 referenced to A1 (Snubberless and logic level) |
| IH(2) | Holding current | Max. 90 | mA | IT = 100 mA, Tj = 25 C | II | 2. For both polarities of A2 referenced to A1 |
| IH(2) | Holding current | Max. 70 | mA | IT = 500 mA, Tj = 25 C | II | 2. For both polarities of A2 referenced to A1 (Snubberless and logic level) |
| dV/dt(2) | Critical rate of rise of off-state voltage | Min. 500 | V/s | VD = 67 % VDRM gate open, Tj = 125 C | 2. For both polarities of A2 referenced to A1 | |
| dV/dt(2) | Critical rate of rise of off-state voltage | Min. 60 | V/s | VD = 67 % VDRM gate open, Tj = 125 C | I, II, III, IV | 2. For both polarities of A2 referenced to A1 (Snubberless and logic level) |
| (dV/dt)c(2) | Commutation dV/dt | Min. 8.5 | V/s | (dI/dt)c = 7 A/ms, Tj = 125 C | 2. For both polarities of A2 referenced to A1 | |
| (dI/dt)c | Critical rate of rise of commutating current | Min. 8.5 | A/ms | Without snubber, Tj = 125 C | ||
| Rth(j-c) | Junction to case thermal resistance (AC) | Max. 1.1 | C/W | |||
| Rth(j-a) | Junction to ambient thermal resistance | 60 | C/W |
2508071805_HXY-MOSFET-BTA20-800CW_C50177047.pdf
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