Silicon planar switching diode IDCHIP 1N4148W with 400 milliwatt power dissipation in SOD123 package
Key Attributes
Model Number:
1N4148W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
1N4148W
Package:
SOD-123
Product Description
Product Overview
This silicon epitaxial planar switching diode is available in a SOD-123 package, offering fast switching capabilities. It is also available in other case styles including DO-35 (1N4148W), MiniMELF (4148), and MicroMELF (4148).
Product Attributes
- Brand: Indreamchip ()
- Origin: China
- Material: Silicon Epitaxial Planar
Technical Specifications
| Parameter | Symbol | Value | Unit | Min | Max | Notes |
| Peak Reverse Voltage | VRM | 100 | V | |||
| Reverse Voltage | VR | 75 | V | |||
| Average Rectified Forward Current | IF(AV) | 150 | mA | |||
| Non-repetitive Peak Forward Surge Current | IFSM | 2 | A | t = 1 s | ||
| Power Dissipation | Ptot | 400 | mW | |||
| Thermal Resistance from Junction to Ambient Air | RJA | 312 | C/W | |||
| Junction Temperature | Tj | 150 | C | |||
| Storage Temperature Range | Tstg | -65 to +150 | C | |||
| Reverse Breakdown Voltage | V(BR)R | 75 | V | 75 | at IR = 1 A | |
| Forward Voltage | VF | V | at IF = 1 mA, 0.715 V; at IF = 10 mA, 0.855 V; at IF = 50 mA, 1 V; at IF = 150 mA, 1.25 V | |||
| Peak Reverse Current | IR | A | at VR = 75 V, 1 A; at VR = 20 V, 25 nA; at VR = 75 V, TJ = 150 C, 50 A; at VR = 25 V, TJ = 150 C, 30 A | |||
| Total Capacitance | CT | 2 | pF | at VR = 0 V, f = 1 MHz | ||
| Reverse Recovery Time | trr | 4 | ns | at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 |
2410121231_IDCHIP-1N4148W_C2848200.pdf
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