Plastic encapsulated HXY MOSFET BT134-800 triac designed for heating and motor control applications
Key Attributes
Model Number:
BT134-800
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.65V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
2V
Mfr. Part #:
BT134-800
Package:
TO-92
Product Description
Product Overview
The BT134-800 is a series of glass-passivated triacs encapsulated in plastic, designed for applications demanding high bidirectional transient and blocking voltage capabilities, along with excellent thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating, and static switching.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen, China
- Package: TO-92
- Material: Plastic-Encapsulated
Technical Specifications
| Symbol | Parameter | Conditions | Unit | Min | Typ | Max |
| Maximum Ratings | ||||||
| VDRM /VRRM | repetitive peak off-state voltage | (Ta=25C unless otherwise noted) | V | 800 | ||
| IGM | Peak Gate Current | A | 0.5 | |||
| VGM | Peak gate voltage | V | 5 | |||
| PGM | Peak gate power | W | 1 | |||
| Tj | Junction Temperature | C | -40 | 125 | ||
| G(AV) | Average Gate Power Dissipation | W | 0.1 | |||
| IT(RMS) | RMS on-state current | A | 4 | |||
| IT | It for fusing | t = 10 ms | As | 16 | ||
| TSM | Non repetitive surge peak on-state current | t = 2ms T =25C j | A | 20 | ||
| dl/dt | Critical-rate of rise of commutation current | IG=2IGT tr100ns F=120Hz | A/s | 50 | ||
| Tstg | Storage Temperature | C | -40 | 150 | ||
| Electrical Characteristics | ||||||
| IDRM,IRRM | Repetitive Peak Off-State Current, Repetitive Peak Reverse Current | VDRM=VRRM T =25C j | mA | 0.8 | ||
| IDRM,IRRM | Repetitive Peak Off-State Current, Repetitive Peak Reverse Current | VDRM=VRRM T =125C j | mA | 0.8 | ||
| VGD | Gate non-trigger voltage | VGM=5V | V | 0.2 | ||
| VTM | On-state voltage | IT=2A,tp=380s | V | 1.65 | ||
| IGT | Gate trigger current | Tj =125C | mA | 10 | ||
| VGT | Gate trigger voltage | Tj =125C | V | 2.5 | ||
| IH | Holding current | VD=12V,IGT=100mA | mA | 30 | ||
| dV/dt | Critical-rate of rise of commutation voltage | Tj =125C | V/s | 20 | ||
| t gt | Turn-on time | ITM =16A ,VDM=V DRM IG =0.1A,dlG/dt=5A/uS | s | 2 | ||
| (dl/dt)c | Rate of change of commutating voltage | Tj =125C | A/s | 5.4 | ||
2508201703_HXY-MOSFET-BT134-800_C50313827.pdf
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